Systems and methods for high yield and high throughput production of graphene

ABSTRACT

Systems and method for producing graphene on a substrate are described. Certain types of exemplar systems include lateral arrangements of a substrate gas scavenging environment and an annealing environment. Certain other types of exemplar systems include lateral arrangements of a graphene producing environment and a cooling environment, which cools the graphene produced on the substrate. Yet other types of exemplar systems include lateral arrangements of a localized annealing environment, localized graphene producing environment and a localized cooling environment inside the same enclosure.Certain type of exemplar methods for producing graphene on a substrate include scavenging a first portion of the substrate and preferably, contemporaneously annealing a second portion of the substrate. Certain other type of exemplar methods for producing graphene include novel annealing techniques and/or implementing temperature profiles and gas flow rate profiles that vary as a function of lateral distance and/or cooling graphene after producing it.

RELATED CASE

This patent application is a Continuation of U.S. patent applicationSer. No. 18/075,485 filed on Dec. 6, 2022 which is a continuation ofU.S. patent application Ser. No. 18/075,479 filed on Dec. 6, 2022 whichis a continuation of U.S. patent application Ser. No. 18/008,457 filedon Dec. 6, 2022 which is a National Stage Application of PCT/US22/35043filed on Jun. 27, 2022, which claims the priority from U.S. provisionalpatent application No. 63/292,533, filed on Dec. 22, 2021, which areincorporated herein by reference for all purpose.

FIELD

The present teachings and arrangements relate generally to novel systemsand methods for realizing high throughput and high yield for grapheneformation. More particularly, the present teachings and arrangementsrelate to continuously, and in a controlled manner, realizing highthroughput and high yield for graphene formation used in different typesof commercial applications.

BACKGROUND

Graphene is an ultrathin material that provides the advantages of amaterial that enjoys a large surface for processing to volume ratio. Inthe energy storage industry, graphene is deemed as a desirable materialfor use in applications such as batteries, super-capacitors, andfuel-cells for its high storage capacity and ability to rapidly charge.Other applications involving graphene include membranes, sensors,anti-corrosion coatings and paint, flexible displays, faster andefficient electronics, solar panels. DNA sequencing and drug delivery.

Graphene may be grown batchwise or in a continuous mode of operation ona substrate. For commercial scale applications of graphene, however, thecontinuous mode of operation is considered promising as it has thepotential to produce the requisite large amounts of graphene. Regardlessof batchwise or continuous, conventional approaches to producinggraphene rely upon multiple discrete treatment units, which are isolatedfrom each other. Further, each discrete unit is dedicated to and/oroptimized for carrying out a particular type of treatment involved inthe graphene growing process. In the conventional arrangements ofmultiple discrete units, typically only one type of treatment carriedout in one type of discrete unit does not negatively impact other typesof treatment, which are better implemented or optimized in other typesof discrete units.

Unfortunately, the conventional continuous graphene producing systemsand processes suffer from several drawbacks. By way of example, anarrangement of multiple discrete units, deployed in a continuous mode ofoperation, represents a significant capital cost. Not only is eachdiscrete unit specialized with unique features for a particular type oftreatment, but also requires different types of input provisions andoutput provisions to create a desired processing environment. As anotherexample, reaching steady state is an arduous and time-consuming taskwhere multiple or single discrete units are involved. As yet anotherexample, the graphene manufacturer is forced to deal with differentequipment manufacturers for procuring, servicing and maintaining spareparts of the different specialized components involved in the differenttypes of discrete units.

As a result, systems and processes are needed for effectively andcontinuously producing graphene without suffering from the drawbacks oftheir conventional counterparts.

SUMMARY

To achieve the foregoing, the present arrangements and teachings offernovel systems and methods for effectively and continuously producinggraphene inside a single, continuous, and laterally extending chamber.During an assembled and operative state, this chamber relies uponrepetitive components to create therewithin different localizedtreatment conditions, each dedicated to carrying out a particular typeof treatment involved in graphene formation. In this configuration ofthe present arrangements, a physical barrier or use of multiple discretetreatment units is not necessary, thereby obviating the drawbacksassociated therewith and encountered when using conventional continuousgraphene producing systems and processes.

In one aspect, the present arrangements provide systems for forminggraphene. One exemplar of such system comprises: (1) a substrate holderdesigned to hold a substrate sheet; (2) one or more tunnels disposedadjacent to the substrate holder; and (3) multiple processingsub-enclosures disposed laterally adjacent to one or more of the tunnelssuch that the substrate holder continuously laterally extends frominside one or more of the tunnels into the multiple processingsub-enclosures.

In this configuration, multiple scavenging gas outlets are disposedinside one or more of the tunnels. Further, at least some of thescavenging gas outlets (referred to herein as “angularly-orientedscavenging gas outlets”) are oriented at an angle with respect to anaxis that is perpendicular to the substrate holder. As a result, theangularly-oriented scavenging gas outlets are designed to provide anangular stream of a substrate gas scavenging composition to contact andscavenge substrate gas in and around the substrate sheet. Stated anotherway, the angularly-oriented scavenging gas outlets, in an operationalstate, create an incident flow rate of said substrate gas scavengingcomposition that is incident upon the substrate sheet. These and othertypes of scavenging gas outlets may be part of one or more scavenginggas distribution systems that deliver substrate gas scavengingcomposition inside one or more of the tunnels.

The exemplar arrangement also contemplates using multiple gasdistribution subsystems in connection with at least one processingsub-enclosure. The multiple gas distribution subsystems arecommunicatively coupled, at one end, to one or more reservoirs havingstored therein the same type of component gases that form an annealinggas composition. At another end, the multiple gas distributionsubsystems are communicatively coupled to at least one processingsub-enclosure. In this arrangement, multiple gas distribution subsystemsare designed to dispense the annealing gas composition from one or morereservoirs of component gases to locations inside at least oneprocessing sub-enclosure. A sub-enclosure receiving an annealing gas maybe thought of as an “annealing sub-enclosure.”

The exemplar arrangement also envisions providing heat inside the“annealing sub-enclosure” or a processing sub-enclosure, which requiresheat for implementing a particular type of processing of the substrateduring graphene formation. Accordingly, the exemplar arrangementincludes one or more heat sources disposed laterally adjacent to atleast one of the processing sub-enclosures or one annealingsub-enclosure. This placement allows one or more of the heat sources toprovide heat inside at least one of the adjacent processingsub-enclosures or the adjacent annealing sub-enclosure.

In absence of an effective gas or a mechanical barrier within andbetween one or more of the tunnels and at least one of the processingsub-enclosures (e.g., an annealing sub-enclosure proximate and adjacentto a tunnel), the exemplar arrangement for forming graphene allows heatand the annealing gas composition, present inside at least one of theprocessing sub-enclosures (e.g., an annealing sub-enclosure), to flowinto and facilitate scavenging inside one or more of the tunnels. It isnoteworthy that conventional systems of graphene formation, thattypically include barriers or different types of discrete units, toattempt substrate processing, simply do not provide this advantage ofthe present systems.

Although not necessary, the present systems for forming graphene mayfurther comprise one or more scavenging gas stream generating subsystemswhich includes the above-mentioned angularly oriented scavenging gasoutlets. Each of the scavenging gas stream generating subsystems mayalso include multiple scavenging gas outlets that are oriented in adifferent direction. By way of example, some of the multiple scavenginggas outlets are oriented in a direction that is parallel to thesubstrate holder. These scavenging gas outlets may be thought of as“laterally-oriented scavenging gas outlets” and, as the name suggests,are designed to generate a laterally flowing substrate gas scavengingcomposition. One of the primary functions of the laterally flowingsubstrate gas scavenging composition is to evacuate undesired contents,such as heat and different type of contaminants, that may be presentinside the tunnels. As a result, the present teachings recognize thatmultiple streams of such laterally flowing substrate gas scavengingcomposition may be more effective for contaminant removal.

To this end, the present arrangements contemplate another exemplardesign in which a collection of some of the multiple scavenging gasoutlets are arranged at corresponding locations inside one or more ofthe tunnels to form multiple sets of the correspondingly locatedscavenging gas outlets. Multiple sets of the correspondingly located and“laterally-oriented scavenging gas outlets” are designed to generatemultiple continuously and longitudinally flowing substrate gasscavenging compositions in the direction that is parallel to thesubstrate holder. Further, the multiple streams of continuously andlongitudinally flowing substrate gas scavenging composition span acrossand evacuate contents inside multiple tunnels. Moreover, the presentteachings also recognize that these streams of substrate gas scavengingcomposition effectively serve as a protective barrier, preventingcontaminants present inside the multiple tunnels from contacting thesubstrate sheet. Thus, the different orientations of the scavenging gasoutlets discussed above are, preferably, part of one or more scavenginggas stream generating subsystems that, in an operative state, implementpreventive measures, inside the tunnels, against contamination andthermal degradation of the substrate and components involved inscavenging of the substrate. This translates into not only high yieldand high throughput for graphene formation, but also significantlyreduces maintenance costs of the present graphene producing systems.

The present arrangements, similarly, offer alternate embodiments formultiple gas distribution subsystems that are used in connection withthe processing sub-enclosures. In preferred embodiments, multiple gasdistribution subsystems of the present arrangements are laterallydisposed and are instrumental in creating different types of localizedprocessing environments (e.g., localized annealing environment,localized producing graphene environment, and localized coolingenvironment). Specifically, inside the multiple processingsub-enclosures that are disposed in series, the different types oflocalized processing environments are created at different laterallydisposed regions that correspond to the lateral locations of themultiple gas distribution subsystems.

In one exemplar approach of the present arrangements, each of theprocessing sub-enclosure has defined therewithin or is integrated withmultiple nozzle-receiving inlets, each of which is communicativelycoupled to a single gas nozzle. Under this approach, multiple gasnozzles through multiple nozzle-receiving inlets (i.e., each gas nozzlethrough their respective ones of nozzle-receiving inlets) provide aparticular type of processing composition to a single processingsub-enclosure and accordingly facilitate formation of a particular typeof localized processing environment therein.

In one embodiment of the present arrangements, a first set of themultiple gas nozzles are communicatively coupled, at one end, to one ormore reservoirs having stored therein the same type of one or morecomponent gases that comprise the annealing gas composition or thesubstrate gas scavenging composition. Regardless of the type ofcomponent gases they are connected to, at another end, the first set ofmultiple gas nozzles are communicatively coupled to at least one of theprocessing sub-enclosures serving as at least one “annealingsub-enclosure.”

Further, a second set of the multiple gas nozzles are communicativelycoupled, at one end, to one or more reservoirs having stored thereinsame type of one or more component gases or hydrocarbon (not necessarilyin gaseous form) that comprise the producing composition (i.e., gascomposition for producing graphene on the substrate inside theenclosure) and communicatively coupled, at another end, to at least oneof the processing sub-enclosures serving as at least one “producingsub-enclosure.”

Further still, a third set of the multiple gas nozzles arecommunicatively coupled, at one end, to one or more reservoirs havingstored therein same type of one or more component gases that comprisethe cooling gas composition (e.g., a substrate gas scavengingcomposition used for cooling the graphene deposited on the substratesurface) and communicatively coupled, at another end, to at least one ofthe processing sub-enclosures serving as at least one “coolingsub-enclosure.”

In connection with one or more of the different types of processing(e.g., annealing or producing) of the substrate, the present teachingsoffer certain implementations that include changing one or more processparameters (e.g., a processing temperature and/or processing incidentflow rate) as a function of lateral distance. By way of example, thepresent teachings recognize that during annealing of the substratesurface, some of the laterally arranged multiple gas nozzles within thefirst set of multiple gas nozzles are dedicated to pretreating thesubstrate surface and others, or some of the others, of the first set ofmultiple gas nozzles within the first set of multiple gas nozzles arededicated to treating the substrate surface. In the pretreating step,the substrate surface is subjected to a substrate gas scavengingcomposition to produce a contaminant-depleted surface and in thetreating step, the substrate surface is subjected to an annealing gascomposition to produce an annealed surface. Consequently, the presentarrangements contemplate a design in which the first set of multiple gasnozzles are structurally similar but a particular collection of thefirst set of multiple gas nozzles perform a different function than theother, or some of the other, collections of the first set of multiplegas nozzles.

By way of example, within the first set of laterally arranged multiplegas nozzles, a first collection of these laterally arranged multiple gasnozzles are communicatively coupled, at one end, to one or morereservoirs that have stored therein one or more component gases thatcomprise the substrate gas scavenging composition. Continuing with thisexample, within the first set of laterally arranged multiple gasnozzles, a second collection of these laterally arranged multiple gasnozzles are communicatively coupled, at one end, to one or morereservoirs that have stored therein one or more component gases thatcomprise the annealing gas composition.

In other embodiments, within a particular set of multiple gas nozzles ofthe present arrangements, one collection of the laterally arrangedmultiple gas nozzles are configured to deliver the same gas composition,but at one or more different incident flow rates, as a second collectionof the laterally arranged multiple gas nozzles. As a result, the presentteachings recognize that within a particular set of laterally arrangedmultiple gas nozzles, two or more different collections of laterallyarranged multiple gas nozzles may deliver a different type of gascomposition or different incident flow rates of a particular type of gascomposition.

Regardless of the type of component gases they are connected to, atanother end, the first set of multiple gas nozzles, which include atleast the first collection and the second collection of multiple gasnozzles, are communicatively coupled to at least one of the processingsub-enclosures serving as at least one “annealing sub-enclosure.” Thepresent teachings recognize that at least one of the annealingsub-enclosures, which is communicatively coupled to the secondcollection of multiple gas nozzles and receives the annealing gascomposition, is serially disposed to at least another one of theannealing sub-enclosures, which is communicatively coupled to the secondcollection of multiple gas nozzles and receives the substrate gasscavenging composition, to form at least a part of the multiple,laterally extending, annealing sub-enclosures.

The present arrangements also provide different embodiments thatfacilitate a particular type of gas composition delivery from the nozzleto locations inside the processing sub-enclosure. Certain gasdistribution subsystems of the present arrangements include: (1)multiple gas conduits; (2) multiple sets of a plurality of gasdispensing apertures; and (3) a gas injection plate. In thesearrangements, multiple gas conduits are disposed within each of theprocessing sub-enclosures. Each gas conduit includes thenozzle-receiving inlet and a conduit outlet. Further, multiple sets of aplurality of gas dispensing apertures are defined on a gas dispensingsurface of each of the processing sub-enclosures. The gas dispensingsurface is disposed adjacent to the substrate holder in an assembledstate of the graphene producing system of the present arrangements. Thegas injection plate may be disposed adjacent to or may be integratedwith each of the processing sub-enclosures. The gas injection plate has,preferably, defined therein multiple gas flow networks, each of whichincludes a network inlet and a set of a plurality of network outletapertures.

In an exemplar assembled state of the present gas distribution systems,the network inlet is coupled to the conduit outlet and each set ofplurality of the network outlet apertures align with and are coupled toone set of plurality of the gas dispensing apertures to define multiplematerial flow paths inside each of the processing sub-enclosures.Preferably, however the gas injection plate is not disposed adjacent tothe tunnels involved in scavenging of the gases present in and aroundthe substrate.

In preferred embodiments of the present arrangements, the gasdistribution subsystems further comprise: (1) a mass flow control; and(2) a control valve. The combination of these provisions represents anexemplar approach in conveying certain types of processing gases to agas nozzle. By way of example, a mass flow control is communicativelycoupled to one or more reservoirs having stored therein one or moretypes of component gases that comprise the annealing gas compositionand/or the substrate gas scavenging composition. The mass flow control,in this configuration, is designed to control incident flow rates of oneor more types of the component gases from one or more of the reservoirs.These flow rates are “incident” because they strike and are incidentupon the substrate surface. The control valve is communicativelycoupled, at one end, to one or more mass flow controls. At another end,the control valve is communicatively coupled to multiple gas nozzlesthat are laterally adjacent to each other and that are communicativelycoupled to at least one processing sub-enclosure. In this example, asingle processing sub-enclosure is configured to receive, from multiplelocations therewithin, the same type of processing composition thatdiffuses a lateral distance inside the processing sub-enclosure tofacilitate formation of a corresponding type of, laterally extending,localized processing environment.

During an operational state of one or more of the mass flow controls andone or more of the control valves, one or more types of the componentgases that form the annealing gas composition are conveyed from one ormore of the reservoirs through the multiple gas nozzles to a laterallyextending location inside at least one of the processing sub-enclosurethat serves as the annealing sub-enclosure.

Although the present arrangements provide for batchwise processing ofthe substrate for production of graphene, they offer certain structuralprovisions directed to implementing continuous processing of the same. Acontinuous graphene formation system may further comprise a linear trackfor laterally displacing an adjacently disposed substrate holder thatincludes a plurality of pallets disposed in series or a continuous belt.In this implementation, one or more of the tunnels may be disposedadjacent to and around the linear track forming a protective coveraround the pallets or the continuous belt.

In certain preferred embodiments, the present system for producinggraphene further comprises a chiller disposed between one of theprocessing sub-enclosures and one of the tunnels. In a more preferredembodiment, the chiller, which may be akin to a chiller block, that issandwiched between one of the tunnels and one of the processingsub-enclosures. In this position, the chiller removes a certain amountof heat present inside the processing sub-enclosure that flows towardsone or more of the tunnels. Thus, the chiller represents a provision tominimize or prevent thermal degradation of the substrate and componentsubsystems involved in the scavenging process of the substrate.

In certain embodiments of the present arrangements, a chilling plate isdisposed adjacent to one side of at least one of the tunnels, which ispositioned proximate to one the processing sub-enclosure. A tunnel thatis proximate in distance to a first of the processing sub-enclosures,disposed in series, is directly subjected to an excessive amount of heatgenerated during graphene formation and flowing from the processingsub-enclosures. Therefore, the present arrangements provide a chillingplate at least on the tunnel that is positioned before the processingsub-enclosures. Further, the present teachings also contemplate using achilling plate adjacent to one or more other tunnels.

Further, to ensure that, during a scavenging operation inside one ormore of the tunnels, an appropriate amount of substrate gas, primarilyoxygen, has been depleted from the substrate before the substrate entersthe processing sub-enclosure, the present arrangements include an oxygenconcentration detecting sensor. In one exemplar arrangement, this sensoris disposed at one or more different locations inside one or moretunnels to measure and/or monitor the oxygen concentration of thesubstrate and/or monitor the oxygen concentration inside one or more ofthe tunnels.

In more preferred embodiments of the present graphene producing systems,multiple processing sub-enclosures are contiguously arranged to form alaterally extending enclosure. The distance by which the enclosurelaterally extends includes an annealing range of lateral distance. Theannealing range of lateral distance may extend a lateral distance of atleast one and/or a portion of the processing sub-enclosure serving as anannealing sub-enclosure. Further, the annealing sub-enclosure iscommunicatively coupled to one or more reservoirs having stored thereinone or more of the component gases of the same type and that comprisethe annealing gas composition.

To form the enclosure, an assembly of contiguously arranged processingsub-enclosures (e.g., annealing sub-enclosures, producing sub-enclosuresand/or cooling sub-enclosures) may be facilitated by a number ofdifferent mechanisms. In one exemplar approach of the present teachings,however, each of the processing sub-enclosures comprises, on a firstside, a slidable component, and on a second side that is opposite to thefirst side, a cavity defined in the processing sub-enclosure forreceiving the slidable component.

In an assembled state of an exemplar enclosure, the slidable componentof one of the processing sub-enclosures engages, at a coupling location,with the cavity for receiving the slidable component of another of theprocessing sub-enclosures to couple and contiguously assemble the twoprocessing sub-enclosures disposed in series. In this manner, more thantwo processing sub-enclosures may be assembled to form the multipleprocessing sub-enclosures or the enclosure.

Further, in the assembled state of the multiple processingsub-enclosures or the enclosure, the coupling location may have definedtherein an expansion gap that is at least partially occupied by theslidable component extending into the cavity (which is designed forreceiving the slidable component). The unfilled portion of the expansiongap is designed to allow one or more of the tunnels to slide uponexpansion (resulting from exposure to excessive heat) of thecontiguously arranged processing sub-enclosures.

In more preferred embodiments, the present graphene producing systemsfurther include multiple furnace sub-structures contiguously arranged toform a laterally extending furnace that has disposed therein theabove-mentioned enclosure and one or more laterally extending heatsources comprising one or more laterally extending heating coils thatare, preferably, positioned outside the enclosure.

The present graphene producing systems may further include one or moretemperature sensors disposed inside the furnace. One or more of thesetemperature sensors are designed to measure temperature generated by oneor more operational heat sources. Appropriately positionedthermocouples, as such sensors are commonly known, ensure that arequisite amount of high heat is being provided to a processing range oflateral distance inside the enclosure (e.g., annealing range of lateraldistance, producing range of lateral distance or cooling range oflateral distance inside the enclosure) to facilitate the formationtherein of a desired localized processing environment.

The present graphene producing systems, preferably, further comprisemultiple scavenging sub-enclosures contiguously arranged to form alaterally extending infeed portion that includes one or more of theabove-mentioned tunnels and preferably includes multiple tunnels. Theinfeed portion may include: (1) a substrate roll designed to laterallyroll out the substrate sheet; and (2) a speed matching system designedto match speed of the substrate holder, in a laterally advancing state,with a linear amount of an unrolled portion of the substrate sheetaround the substrate roll per unit time. In an alternate embodiment, theinfeed portion includes the above-mentioned substrate roll and a servomotor communicatively coupled to the substrate roll and designed tofacilitate lateral roll out of the substrate roll.

To maintain a desired tautness in a rolled-out portion from thesubstrate roll, the infeed portion further comprises a slack loop sensorthat is coupled to the servo motor. The slack loop sensor is designed todetect a slack loop of the substrate sheet resulting from the unrollingmotion of the substrate roll. In this capacity, the slack loop sensor isalso designed to control operation of the servo motor and the unrollingmotion of the substrate roll to dispense an appropriate amount of thesubstrate sheet and minimize or prevent a slack loop.

The infeed portion may include an exhaust pump for removing heat and/orthe substrate gas scavenging composition present inside one or more ofthe tunnels. In one embodiment, one or more of the heat sources used inthe present arrangements do not laterally extend adjacent to thelaterally extending infeed portion. In the alternate, one or more of theheat sources that may laterally extend adjacent to the laterallyextending infeed portion are not active, during an operational state ofthe infeed portion, to heat the infeed portion. As a result, during ascavenging operational state, the infeed portion uses the heat andannealing gas composition that flows from the annealing sub-enclosure tofacilitate scavenging of the substrate.

The infeed portion of the present arrangements contemplates provisionsfor receiving and advancing the substrate holder. In one embodiment, theinfeed portion of the present arrangements includes a drive system thatis designed to continuously, laterally advance, a substrate holder,e.g., multiple pallets or a continuous belt, through at least asubstantial portion of the graphene producing system. Further, thisarrangement may include one or more rollers that are designed to feedthe substrate holder, e.g., multiple pallets towards the drive system sothat substrate processing for graphene formation may begin.

In another aspect, the present arrangements provide another type ofgraphene producing systems. One exemplar of such graphene producingsystems comprises: (1) a substrate holder that is designed to hold asubstrate sheet; (2) one or more outfeed tunnels, which are disposedadjacent to the substrate holder; and (3) multiple processingsub-enclosures disposed laterally adjacent to one or more of the outfeedtunnels. In this configuration, the substrate holder continuouslylaterally extends from inside one or more of the multiple processingsub-enclosures into the outfeed tunnels.

Outfeed tunnels continue a cooling process that may have started insideone or more processing sub-enclosures serving as one or more “coolingsub-enclosures.” Multiple outfeed gas outlets are disposed inside one ormore of the outfeed tunnels. At least some of these outfeed gas outletsare oriented in a direction that is parallel to the substrate holder andreferred herein to as “laterally-oriented outfeed gas outlets.” Theselaterally-oriented outfeed gas outlets are designed to generate alaterally flowing substrate gas scavenging stream towards an exit end ofthe outfeed tunnels and that removes contents, e.g., heat, producingcomposition and substrate gas scavenging composition, present inside oneor more of the outfeed tunnels and forms a protective layer above thesubstrate surface undergoing cooling. The present teachings recognizethat, during cooling, such preventive measures against degradationand/or contamination represent preferred embodiments of the presentarrangements as they are instrumental in realizing high yield and highthroughput for graphene formation.

The exemplar graphene producing systems also include multiple gasdistribution subsystems that are communicatively coupled, at one end, toone or more reservoirs of the same type of component gases that form aproducing composition and/or a substrate gas scavenging composition. Atanother end, the gas distribution systems are communicatively coupled toat least one of the processing sub-enclosures and, preferably, tomultiple processing sub-enclosures. In this arrangement, multiple gasdistribution subsystems are designed to dispense the producingcomposition and/or the substrate gas scavenging composition inside atleast one of the processing sub-enclosures or preferably multiples ofthe processing sub-enclosures. When a producing composition is dispensedinside a processing sub-enclosure, then the sub-enclosure is serving asa “producing sub-enclosure” that produces graphene on the substratesurface.

When a substrate gas scavenging composition is dispensed inside aprocessing sub-enclosure, which operates in the absence of an active,adjacent heat source, then the sub-enclosure is deemed to be a “coolingsub-enclosure.”

Further, in absence of an effective gas or a mechanical barrier withinand between one or more of the outfeed tunnels and at least one of theprocessing sub-enclosures (e.g., producing sub-enclosure and/or coolingsub-enclosure), the system for forming graphene is designed to allowheat and the producing composition and/or the substrate gas scavengingcomposition present inside at least one of the processing sub-enclosuresto laterally flow into and be removed from the outfeed tunnels.

The present graphene producing systems, preferably, further comprisemultiple outfeed sub-enclosures contiguously arranged to form alaterally extending outfeed portion that includes one or more outfeedtunnels and preferably includes multiple outfeed tunnels. In thoseconfigurations where the infeed portion, the multiple processingsub-enclosures and the outfeed portion are assembled to form thegraphene producing systems of the present arrangements, the multipleprocessing sub-enclosures are sandwiched between the infeed portion andthe outfeed portion. Further, during an operational state of thegraphene producing systems of the present arrangements, the substratesheet travels a lateral distance extending from the infeed portionthrough the multiple processing sub-enclosures and to an end or near theend of the outfeed portion.

Like the infeed portion, the outfeed portion may include one or moreoutfeed gas streams generating subsystems. A collection of some of themultiple outfeed gas outlets, which are part of one or more of theoutfeed gas streams generating subsystems, are arranged at correspondinglocations inside each of the outfeed tunnels to form multiple sets ofcorrespondingly located outfeed gas outlets. These multiple sets ofcorrespondingly located outfeed gas outlets, preferably, include“laterally-oriented gas flow outlets.” Further, the multiple sets ofcorrespondingly located outfeed gas outlets have an orientation that isdesigned to generate multiple continuously longitudinally flowingsubstrate gas scavenging composition streams in the direction that isparallel to the substrate holder. These longitudinally flowing substrategas scavenging composition streams are designed to span across andevacuate contents inside the multiple outfeed tunnels and to effectivelyserve as a protective barrier preventing contaminants present inside themultiple outfeed tunnels from contacting the substrate sheet.

In certain embodiments, each the processing sub-enclosure of the presentarrangements have defined therewithin or integrated with multiplenozzle-receiving inlets, each of which is coupled to one of the gasnozzles. Further, a first set of the multiple gas nozzles, chosen fromthe multiple gas nozzles (mentioned above), are communicatively coupled,at one end, to one or more reservoirs having stored therein same type ofone or more component gases that comprise the producing compositionand/or the substrate gas scavenging composition and/or communicativelycoupled, at one end, to one or more reservoirs having stored thereinsame type of hydrocarbon, not necessarily in gaseous state, but thatforms a producing composition inside a processing sub-enclosure. Inthese embodiments, the first set of the multiple gas nozzles arecommunicatively coupled, at another end, to at least one of theprocessing sub-enclosures serving as at least one producingsub-enclosure.

The present teachings recognize that the cooling sub-enclosures may bearranged similarly. As a result, a second set of the multiple gasnozzles, chosen from the multiple gas nozzles, may be communicativelycoupled, at one end, to one or more reservoirs having stored therein thesame type of one or more component gases that comprise the cooling gascomposition, e.g., the substrate gas scavenging composition. At anotherend, the second set of multiple gas nozzles may be communicativelycoupled to at least another of the processing sub-enclosures serving asat least one cooling sub-enclosure. One or more of these different typesof sub-enclosures may be contiguously arranged to create different typesof localized processing environments that facilitate graphene formation.By way of example, at least one of the producing sub-enclosures and atleast one of the cooling sub-enclosures are coupled to laterally extendand form part of the multiple processing sub-enclosures.

One of the gas distribution subsystems, used in connection with one ofthese processing sub-enclosures, may further comprise: (1) multiple gasconduits; (2) multiple sets of a plurality of gas dispensing apertures;and (3) a gas injection plate. Multiple gas conduits are defined insideeach of the processing sub-enclosures. Further, each of the gas conduitincludes the nozzle-receiving inlet and a conduit outlet. As mentionedbefore, multiple sets of a plurality of gas dispensing apertures aredefined on a gas dispensing surface of each the processingsub-enclosures. In this arrangement, the gas dispensing surface isdisposed adjacent to the substrate holder and the gas injection plate isdisposed adjacent to each of the processing sub-enclosures.

The gas injection plate has defined therein multiple gas flow networks,each of which, in turn, includes a network inlet and a set of aplurality of network outlet apertures. To define multiple material flowpaths inside each of the processing sub-enclosures, the network inlet iscoupled to the conduit outlet and each of the sets of plurality of thenetwork outlet apertures align with and are coupled to one of the setsof plurality of the gas dispensing apertures. The gas injection plate,preferably, is not disposed adjacent to or does not extend over theoutfeed tunnels.

In preferred embodiments, the gas distribution subsystem of the presentarrangements further includes: (1) a mass flow control; and (2) acontrol valve. The mass flow control is communicatively coupled to oneor more reservoirs having stored therein one or more types of componentgases that comprise the producing composition and/or the substrate gasscavenging composition and/or communicatively coupled, at one end, toone or more reservoirs having stored therein same type of hydrocarbon,not necessarily in gaseous state, but that forms a producing compositioninside a producing sub-enclosure. The mass flow control is designed tocontrol incident flow rates of one or more of the component gases,inside the producing sub-enclosure and/or the cooling sub-enclosure,from one or more of the reservoirs. The control valve is communicativelycoupled, at one end, to one or more of the mass flow controls andcommunicatively coupled, at another end, to the multiple gas nozzles. Inturn, the multiple gas nozzles are communicatively coupled to at leastone the processing sub-enclosure, e.g., the producing sub-enclosure andthe cooling sub-enclosure. During an operational state of one or more ofthe mass flow controls and one or more of the control valves, one ormore of the component gases are conveyed from one or more of thereservoirs through the multiple gas nozzles to at least one of theprocessing sub-enclosure that is serving as the producing sub-enclosureor the cooling sub-enclosure.

The outfeed portion further comprises a linear track having disposedthereon a laterally extending heat sink for cooling off the adjacentsubstrate holder comprising a plurality of pallets disposed in series ora continuous belt. One or more of the tunnels, that are disposedadjacent to and around the linear track, form a protective cover aroundthe substrate bolder.

In the outfeed portion, a chiller (e.g., an outfeed chiller block) isdisposed between one of the processing sub-enclosures and one of theoutfeed tunnels, which is proximate to one of the processingsub-enclosures. In this configuration, the chiller is designed to removea certain amount of heat present inside the processing sub-enclosurethat flows towards one or more of the outfeed tunnels.

The present systems for producing graphene, preferably, include moreprovisions for cooling a substrate that has undergone high temperaturetreatment. In one embodiment, the present arrangements further comprise(1) a chilling plate disposed adjacent to at least one of the outfeedtunnels that is disposed proximate to one of the processingsub-enclosures; (2) a chilling plate disposed adjacent to at least oneof the linear tracks that is disposed proximate to one of the processingsub-enclosures; and (3) an oxygen concentration detecting sensordisposed, at one or more different locations, inside one or more of theoutfeed tunnels. One of the chilling plates is disposed adjacent to eachof the outfeed tunnels and one of the chilling plates is disposedadjacent to the linear track.

The present systems of producing graphene, preferably, further comprisesmultiple furnace sub-structures contiguously arranged to form alaterally extending furnace that has disposed therein the enclosure andone or more laterally extending heat sources. In a more preferredembodiment, the heat sources deployed in the present arrangementscomprise one or more laterally extending heating coils that arepositioned outside the enclosure. In certain embodiments, such laterallyextending heat sources, e.g., heating coils, may be disposed inside theenclosure. Regardless of whether they are inside or outside theenclosure, these heating coils, preferably, do not extend the entireportion of the furnace, allowing for cooling of the substrate before itexits the furnace. These heating coils, preferably, also do not extendadjacent to the infeed and the outfeed portions because high temperaturetreatment is not required for processing the substrate inside theseportions.

The enclosure may include at least one processing sub-enclosure that iscommunicatively coupled to one or more of the reservoirs having storedtherein one or more of the component gases of the same type and thatcomprise the producing composition and/or communicatively coupled, atone end, to one or more reservoirs having stored therein same type ofhydrocarbon, not necessarily in gaseous state, but that forms aproducing composition inside a portion of the enclosure. As will beexplained later, presence of the producing composition facilitatesforming a localized producing environment inside a portion of theenclosure. The localized producing environment facilitates production ofgraphene on the substrate surface.

Another portion of the enclosure includes at least one of the processingsub-enclosures serving as at least one cooling sub-enclosure. Eachcooling sub-enclosure is communicatively coupled to one or more of thereservoirs one of or more of the component gases of same type thatcomprise the cooling gas composition, e.g., the substrate gas scavengingcomposition. As mentioned above, the cooling sub-enclosure, preferably,does not have, adjacently disposed, one or more active heat sources,allowing for cooling inside the cooling sub-enclosure.

As mentioned before, the present graphene producing system may furthercomprise multiple outfeed sub-enclosures contiguously arranged to form alaterally extending outfeed portion that includes one or more of theoutfeed tunnels. The outfeed portion may use an exhaust pump forremoving heat and/or the substrate gas scavenging composition presentinside one or more of the outfeed tunnels.

In yet another aspect, the present arrangements provide yet other typesof systems for forming graphene. One exemplar of these systems includes:(1) a laterally extending substrate holder for holding a substratesheet; and (2) multiple processing sub-enclosures contiguously arrangedto form a laterally extending enclosure, which encloses therewithin thesubstrate holder. In this arrangement, each of the processingsub-enclosure has defined therewithin or is integrated with multiplenozzle-receiving inlets. Further, the enclosure includes multiple setsof laterally positioned nozzle-receiving inlets. Also included in thisarrangement are multiple sets of laterally positioned gas nozzles, eachset of which is communicatively coupled to an associated set of thenozzle-receiving inlets.

These systems include provisions for providing certain types ofprocessing gases inside a certain lateral range of distance inside theenclosure. By way of example, one or more reservoirs are provided. Oneor more reservoirs have stored therein one or more types of componentgases that comprise different types processing compositions (e.g.,substrate gas scavenging composition, annealing gas composition andproducing composition). In the case of producing composition, thepresent teachings recognize that one or more reservoirs may have storedtherein one or more different hydrocarbons, not necessarily in gaseousstate, but that forms a producing composition a certain lateral range ofdistance inside the enclosure.

As another example, multiple sets of mass flow controls may also be partof the gas distribution system. Each set of mass flow controls iscommunicatively coupled to one or more of these reservoirs (i.e., havingstored therein same type of one or more of component gases for forming aparticular type of processing composition). Each set of mass flowcontrols is designed to control incident flow rates of the same type ofcomponent gas(es) inside at least one of the processing sub-enclosures.

As yet another example, multiple sets of control valves may also beinvolved in providing certain types of gas(es) inside the processingsub-enclosure. Each set of control valves is communicatively coupled, atone end, to an associated set of the mass flow controls andcommunicatively coupled, at another end, to an associated set ofmultiple gas nozzles.

These provisions define multiple sets of processing material flow pathsfor a single processing sub-enclosure. Each set of processing materialflow paths extends from one or more of the reservoirs (having storedtherein one or more component gases comprising the same type of theprocessing composition or in the case of producing composition, havingstored therein one or more different types of hydrocarbon that are notnecessarily in gaseous state, but that form a producing compositioninside a processing sub-enclosure), through the associated set of thegas nozzles and the associated set of the nozzle-receiving inlets, to aparticular range of lateral distance inside the enclosure forimplementing a particular type of processing. More preferably, a set ofprocessing material flow paths is designed to convey a particular typeof processing composition to create a particular type of localizedprocessing environment spanning a processing range of lateral distanceinside the enclosure.

Inside the enclosure, a processing range of lateral distance may referto, depending on the type of processing being carried out, an “annealingrange of lateral distance,” a “producing range of lateral distance,” ora “cooling range of lateral distance.”

The annealing range of lateral distance refers to a lateral distancealong which the different processing conditions for annealing areimplemented. The annealing range of lateral distance starts at or nearone end of the enclosure (e.g., after the end of the infeed portion orthe chiller). The producing range of lateral distance refers to anotherlateral distance along which the different processing conditions forproducing (graphene) are implemented. The producing range of lateraldistance starts at or near an end of the annealing range of lateraldistance. The cooling range of lateral distance refers to yet anotherlateral distance along which the different processing conditions forcooling (graphene) are implemented. The cooling range of lateraldistance starts at or near an end of the producing range of lateraldistance. Further, the cooling range of lateral distance ends at or nearother end of enclosure (e.g., before the beginning of the outfeedportion or the outfeed chiller).

In this arrangement, one or more heat sources laterally extend and areparallel to the laterally extending enclosure. One or more heat sourcescomprise one or more annealing heat sources, which are designed toprovide heat inside the annealing range of lateral distance (inside theenclosure). Similarly, one or more heat sources comprise one or moreproducing heat sources designed to provide heat inside the producingrange of lateral distance (inside the enclosure).

Consistent with the recognition that different provisions are requiredfor different types of processing, multiple sets of mass flow controlscomprise multiple annealing set of mass flow controls, multipleproducing set of mass flow controls and multiple cooling set of massflow controls. In this arrangement, the multiple annealing set of massflow controls is coupled to one or more of the reservoirs having storedtherein one or more types of component gases that comprise a substrategas scavenging composition and an annealing gas composition. Similarly,the multiple producing set of mass flow controls is coupled to one ormore of the reservoirs having stored therein one or more types ofcomponent gases that comprise a producing composition or and/or iscoupled to one or more reservoirs having stored therein one or moredifferent types of hydrocarbons, not necessarily in gaseous state, butthat forms a producing composition along a producing range of lateraldistance inside the enclosure. The multiple cooling set of mass flowcontrols is coupled to one or more of the reservoirs having storedtherein one or more types of component gases that comprise a substrategas scavenging composition, which is creates a localized processingenvironment in the absence of adjacent heating.

Building on this recognition of requiring different provisions fordifferent types of processing of the substrate, the multiple sets ofcontrol valves comprise multiple annealing control valves, multipleproducing control valves and multiple cooling control valves. Themultiple annealing control valves are communicatively coupled, at oneend, to the multiple annealing set of mass flow controls. At anotherend, the multiple annealing control valves are communicatively coupledto the multiple annealing gas nozzles that are in turn arecommunicatively coupled to at least one annealing sub-enclosure (whichextends the annealing range of lateral distance inside the enclosure).In an operational state of the annealing gas nozzles and one or more ofthe annealing heat sources, the annealing gas composition, in presenceof heat generated from the annealing heat sources, creates a localizedannealing environment inside the annealing sub-enclosure.

Similarly, the multiple producing control valves are communicativelycoupled, at one end, to the multiple producing set of mass flowcontrols. At another end, the multiple producing control valves arecommunicatively coupled to the multiple producing gas nozzles that arein turn are communicatively coupled to at least one producingsub-enclosure (which extends the producing range of lateral distanceinside the enclosure). In an operational state of the producing gasnozzles and one or more of the producing heat sources, the producingcomposition, in presence of heat generated from the producing heatsources, creates a localized producing (graphene) environment inside theproducing sub-enclosure.

The multiple cooling control valves are communicatively coupled, at oneend, to the multiple cooling set of mass flow controls. At another end,the multiple cooling control valves are communicatively coupled to themultiple cooling gas nozzles that are in turn are communicativelycoupled to at least one cooling sub-enclosure (which spans the coolingrange of lateral distance inside the enclosure). In an operational stateof the cooling gas nozzles and in absence of one or more active,adjacently disposed, heat sources, the substrate gas scavengingcomposition creates a localized cooling environment inside the coolingsub-enclosure.

The present arrangements, that realize the advantage of high yield andhigh throughput of graphene formation, may further comprise a processor,which is communicatively coupled to one or more of the heat sources,multiple sets of mass flow controls, multiple sets of control valves. Inthis configuration, the processor facilitates creation of one or moretypes of localized processing environments (e.g., localized annealingenvironment, localized producing (graphene) environment and localizedcooling environment), each extending a processing range of lateraldistance (e.g., annealing range of lateral distance, producing(graphene) range of lateral distance and cooling range of lateraldistance, respectively) inside the enclosure.

In yet another aspect, the present teachings provide methods for forminggraphene. One exemplar of these methods comprises: (1) disposing, on alaterally extending substrate holder, a laterally extending substratesheet having located thereon a first surface for processing and a secondsurface for processing; (2) a step of scavenging, in presence of asubstrate gas scavenging composition, a substrate gas present in andaround the first surface for processing to produce a substrate gasdepleted surface; (3) a step of annealing, in presence of an annealinggas composition and/or the substrate gas scavenging composition and atan annealing temperature, the second surface for processing to producean annealed surface. The annealing temperature is produced using one ormore heat sources being disposed adjacent to the second surface forprocessing. Further, some of the heat, resulting from the annealingtemperature and the annealing gas composition and/or the substrate gasscavenging composition, flows towards the first surface for processingand facilitates production of the substrate gas depleted surface. Theannealing gas composition and/or the substrate gas scavengingcomposition, preferably, flows backwards (i.e., a negative distancealong the X-axis) because the second surface for processing is located apositive lateral distance (i.e., a positive distance along the X-axis)from the first surface for processing.

The step of scavenging is, preferably, carried out in absence of anactive heating source positioned adjacent to the first surface forprocessing. In this embodiment, some of the heat flowing towards thefirst surface for processing provides the requisite temperaturetreatment and may range from about 50° C. to about 300° C. and morepreferably range from about 50° C. to about 100° C.

In certain preferred embodiments, the step of scavenging of the presentteachings includes using multiple gas outlets, e.g., using multiplelaterally-oriented gas outlets and multiple angularly-oriented gasoutlets. As mentioned before, the multiple laterally-oriented gasoutlets are oriented in a direction that is parallel to the substrateholder and the multiple angularly-oriented gas outlets are oriented in adirection that is at an angle to an axis perpendicular to the substrateholder.

These preferred embodiments of the present teachings also include: (1) astep of protecting the substrate sheet from contaminants present aroundthe substrate sheet, using a laterally flowing stream of the substrategas scavenging composition generated from one or more of thelaterally-oriented gas outlets; and (2) a step of contacting thesubstrate sheet with an angularly flowing stream of the substrate gasscavenging composition generated from one or more of theangularly-oriented gas outlets.

The substrate gas scavenging composition may be a mixture of an inertgas, preferably argon, and hydrogen gas at an inert gas to hydrogenratio ranging from about 100:0.1 to about 100:5. The substrate gasincludes oxygen, water and hydrocarbons.

In one approach, the step of disposing includes introducing thesubstrate sheet on the substrate holder at a feed rate ranging fromabout 1 mm/second to about 30 inches/second. Under this approach, a“reference point” refers to a location at which the substrate sheetfirst contacts the substrate holder. Further, a first distance extendsbetween the reference point and the first surface for processing and asecond distance extends between the reference point and the secondsurface for processing. By way of example, the second distance rangesfrom about 1.2 times of the first distance to about 3 times of the firstdistance.

Regardless of whether a substrate roll is used or the substrate sheetobtained is originally in an unrolled state, the step of scavenging,preferably comprises: (1) advancing the first surface for processing ascavenging range of lateral distance inside a scavenging sub-enclosure;(2) increasing, during the step of advancing and inside the scavengingsub-enclosure, an incident flow rate of the substrate gas scavengingcomposition from a relative low incident flow rate value to a relativelyhigh incident flow rate value; (3) allowing some of the heat, resultingfrom the annealing temperature and the annealing gas composition and/orthe substrate gas scavenging composition used during the annealing, toflow in an opposite direction to a direction of the laterally advancingfirst surface for processing. In the step of scavenging, the firstsurface for processing advances the scavenging range of lateraldistance. By way of example, the scavenging range of lateral distanceranges from about 50|_([MB1])0 mm to about 3000 mm, the relative lowincident flow rate value of the substrate gas scavenging compositionranges from 0.5 liters/minute to 20 liters/minute and more preferablyrange from about 0.5 liters/minute to 4.5 liters/minute, and therelative high incident flow rate value of the substrate gas scavengingcomposition ranges from about 5 liters/minute to 100 liters/minute andmore preferably range from about 5 liters/minute to 20 liters/minute. Asanother example, the scavenging range of lateral distance ranges fromabout 0.5% of the total lateral distance that the substrate surfaceextends to about 5% of the total lateral distance that the substratesurface extends.

The step of annealing, preferably, comprises: (1) mixing, using one ormore mass flow controls, certain amounts of one or more types ofcomponent gases stored inside one or more reservoirs, to produce thesubstrate gas scavenging composition and/or the annealing gascomposition; (2) activating an annealing control valve, that iscommunicatively coupled, at one end, to one or more of the mass flowcontrols, and communicatively coupled, at another end, to multiple setsof gas dispensing apertures disposed inside the processingsub-enclosure; and (3) conveying the substrate gas scavengingcomposition and/or the annealing gas composition formed from one or morecomponent gases stored inside one or more of the reservoirs to theprocessing sub-enclosure. In preferred implementations of these methodsand inside the processing sub-enclosure, one set of the gas dispensingapertures are separated a lateral separating distance from another setof the gas dispensing apertures. As a result, preferred embodiments ofthe present methods include creating an annealing environment by usingheat generated from one or more heat sources (e.g., multiple annealingheat sources) and using the substrate gas scavenging composition and/orannealing gas composition that diffuses into a region, extending atleast the lateral separating distance, inside the processingsub-enclosure. Moreover, the step of scavenging and the step ofannealing are, preferably, carried out contemporaneously.

The present teachings, preferably, further comprise a step of initiallyscavenging, in presence of the substrate gas scavenging composition, thesubstrate gas present in and around an unprocessed surface of thesubstrate sheet to produce the second surface for processing. Further,the step of initially scavenging the unprocessed surface of thesubstrate sheet is carried out prior to the step of scavenging of thefirst surface for processing and the step of annealing of the secondsurface for processing.

The annealing temperature, produced using one or more heat sources(e.g., multiple annealing heat sources) that are positioned adjacent tothe second surface for processing, is higher than a scavengingtemperature resulting from some of the heat that flows towards the firstsurface for processing. By way of example, the annealing temperatureranges from about 500° C. to about 1100° C., and the scavengingtemperature ranges from about 50° C. to about 500° C. and morepreferably range from about 50° C. to about 100° C.

In yet another aspect, the present teachings provide yet other types ofmethods for producing graphene. One exemplar of these methods comprises:(1) a step of pretreating a surface for processing using one or moredifferent pretreating incident flow rates of a substrate gas scavengingcomposition and/or an annealing gas composition, in presence of one ormore different pretreating temperatures, to produce acontaminant-depleted surface, and (2) a step of treating thecontaminant-depleted surface using one or more different treatingincident flow rates of the annealing gas composition, in presence of oneor more different treating temperatures, to produce an annealed surface.

The present teachings offer certain methods of forming graphene,including pretreating, that comprise displacing, inside an enclosure, asurface a pretreating range of lateral distance. In certain embodiments,the pretreating range of lateral distance of the present teachings maybe thought of as including an initial pretreating lateral location orregion and, disposed a lateral distance away therefrom, a subsequentpretreating lateral location or region.

These methods further comprise exposing, during the displacing of thesurface inside the enclosure, a temperature profile that varies as afunction of a lateral distance displaced within the pretreating range oflateral distance inside the enclosure. In certain embodiments, the stepof exposing of the present teachings includes using one or more heatsources extending the pretreating range of lateral distance, preferablyoutside the enclosure, but disposed adjacent to the surface. In thisconfiguration, the initial pretreating lateral location or region,inside the enclosure, is at a minimum temperature of an annealingtemperature. Further, the subsequent pretreating lateral location orregion, inside the enclosure, is at a maximum temperature of theannealing temperature.

These methods further still include subjecting, during the displacing ofthe surface inside the enclosure, the surface to a pretreating incidentflow rate profile of a substrate gas scavenging composition that variesas a function of a lateral distance displaced within the pretreatingrange of lateral distance inside the enclosure. In certain embodiments,the step of subjecting of the present teachings includes using multiplegas distribution systems that deliver to lateral locations extending thepretreating range of lateral distance. In this configuration, arelatively low incident flow rate of the substrate gas scavengingcomposition is applied to the surface at the initial pretreating laterallocation or region. Further, a relatively high incident flow rate of thesubstrate gas scavenging composition is applied to the surface at thesubsequent pretreating lateral location or region. These steps ofpretreating of the substrate surface are carried out contemporaneously.

The pretreating range of lateral distance may range from about 100 mm toabout 3000 mm. The relatively low temperature value may range from about150° C. to about 1000° C. The relatively high temperature value mayrange from about 1000° C. to about 1100° C. The relative low incidentflow rate value may range from about 0.5 liters/minute to 20liters/minute and more preferably range from about 0.5 liters/minute to4.5 liters/minute, and the relative high incident flow rate value of thesubstrate gas scavenging composition ranges from about 5 liters/minuteto 100 liters/minute and more preferably range from about 5liters/minute to 20 liters/minute.

The present teachings offer other methods of forming graphene, includingtreating, that comprise displacing a surface, a treating range oflateral distance inside an enclosure. These methods further compriseexposing, during the displacing of the surface inside the enclosure, thesurface to a temperature profile that remains substantially constantwithin the treating range of lateral distance inside the enclosure. Incertain embodiments, the step of exposing includes using one or moreheat sources extending the treating range of lateral distance,preferably outside the enclosure, but disposed adjacent to the surface.In this configuration, using heat generated from one or more of theseheat sources, the treating range of lateral distance inside theenclosure is maintained at a substantially constant annealingtemperature.

These methods further still include subjecting, during the displacing ofthe surface inside the enclosure, the surface to a treating incidentflow rate profile of a substrate gas scavenging composition that variesas a function of a lateral distance displaced within the pretreatingrange of lateral distance inside the enclosure. In certain embodiments,the subjecting step of the present teachings includes using one or moregas distribution systems that deliver a substantially uniform incidentflow rate of the annealing gas composition to locations that extend thetreating range of lateral distance inside the enclosure. These treatingsteps are carried out contemporaneously.

The treating range of lateral distance may range from about 100 mm toabout 3000 mm. The treating temperature may range from about 500° C. toabout 1100° C. The treating incident flow rate may range from about 0.5liters/minute to about 100 liters/minute and in a more preferredembodiment from 0.5 to 20 liters/minute.

In many exemplar methods for forming graphene, the annealing gascomposition includes trace amounts of oxygen. After annealing ortreating, a residual amount (trace) of oxygen remains on the substratesurface. The present teachings recognize that removal of residual oxygenprior to production of graphene on the substrate surface is necessaryfor producing graphene suited for certain commercial applications.

To this end, the present methods include passivating the substrate andfurther comprise displacing a surface, a passivating range of lateraldistance inside an enclosure. In certain embodiments, the passivatingrange of lateral distance of the present teachings includes an initialpassivating lateral location or region and, disposed a lateral distanceaway therefrom, a subsequent passivating lateral location or region.

These methods further include exposing, during the displacing of thesurface inside the enclosure, a temperature profile that remainssubstantially constant within the passivating range of lateral distanceinside the enclosure. In certain embodiments, the step of exposingincludes using one or more heat sources extending a passivating range oflateral distance, preferably outside the enclosure, but disposedadjacent to the surface. In this configuration, a substantially constantannealing temperature is provided in locations extending the passivatingrange of lateral distance inside the enclosure.

These methods further still include exposing, during the displacing ofthe surface inside the enclosure, subjecting, the surface to apassivating incident flow rate profile of a substrate gas scavengingcomposition that varies as a function of a lateral distance displacedwithin the passivating range of lateral distance inside the enclosure.In certain embodiments of the present teachings, the step of subjectingof the present teachings includes using one or more of the gasdistribution systems for applying a relatively high incident flow rateof the substrate gas scavenging composition to the surface at theinitial passivating lateral location or region. Further, a relativelylow incident flow rate of the substrate gas scavenging composition isapplied to the surface at the subsequent passivating lateral location orregion. These passivating steps carried out contemporaneously.

In these embodiments of the present teachings, the substrate gasscavenging composition, in the presence of an appropriate annealingtemperature, reacts with the trace amounts of oxygen to produce apassivated surface. Elimination of free oxygen from the substratesurface, by implementing this passivating step, ensures that asubsequent step of producing graphene on the substrate surface is notnegatively impacted by the presence of contaminants such as oxygen onthe substrate surface. The passivating range of lateral distance mayrange from about 100 mm to about 3000 mm. The passivating temperaturemay range from about 500° C. to about 1100° C. The passivating incidentflow rate may range from about 0.5 liters/minute to about 100liters/minute and in a more preferred embodiment from about 0.5liters/minute to about 20 liters per minute.

The present teachings recognize that, in those circumstances when theannealing gas composition includes trace amounts of oxygen, the step ofpassivating is carried out in a batchwise operation and need not becarried out during the step of displacing the annealed surface thepassivating range of lateral distance. In a batchwise operation andafter annealing has concluded, the methods of forming graphene furthercomprise passivating the annealed surface using a stream of thesubstrate gas scavenging composition at a passivating incident flowrate, in presence of a passivating temperature, to react with the traceamounts of oxygen to produce a passivated surface.

In those circumstances when the annealing gas composition does notinclude trace amounts of oxygen or trace amounts of oxygen are of noconsequence to the ultimately produced graphene on the substratesurface, the present methods do not include the step of passivating.Further, the present teachings recognize that there may be incidentalpassivation from oxygen present (e.g., trace amounts of oxygen present)in the substrate. In these embodiments, after the step of treating, themethods of forming graphene advance to a step of producing graphene onthe treated surface. This step of producing uses one or more differentincident flow rates of a producing composition, in presence of aproducing temperature, to produce graphene on the substrate sheet.

After the step of producing, the present methods then include a step ofcooling the graphene, deposited on the substrate sheet. This step ofcooling uses a cooling incident flow rate of the substrate gasscavenging composition in absence of heat generated from one or moreadjacent heat sources (e.g., one or more heating coils adjacent to thesubstrate surface) or presence of a cooling temperature to produce arelatively cool graphene deposited on the substrate sheet.

In yet another aspect, the present teachings offer yet other types ofmethods. One exemplar of such methods comprises a step of disposing, ona laterally extending substrate holder, a laterally extending substratesheet having located thereon a first surface for processing and a secondsurface for processing. In the step of disposing, the second surface forprocessing is located a positive lateral distance from the first surfacefor processing.

The exemplar method further includes a step of annealing, in presence ofan annealing gas composition and/or the substrate gas scavengingcomposition and at an annealing temperature, the first surface forprocessing to produce an annealed surface. The annealing temperature isproduced using one or more heat sources being disposed adjacent to thefirst surface for processing.

The exemplar method further still includes a step of producing graphene,in presence of a producing composition and at a producing temperature,on the second surface for processing to produce a graphene depositedsurface. The step of annealing and the step of producing are,preferably, carried out contemporaneously. By way of example, theproducing composition comprises Ar and a hydrocarbon, e.g., CH₄, and theproducing temperature ranges from about 600° C. to about 1100° C. and ina more preferred embodiment from 900° C. to about 1100° C.Representative hydrocarbons in the producing composition includemethane, ethane, ethene (ethylene), ethyne (acetylene), propane, butane,pentane, hexane, heptane, octane, and decane.

In preferred embodiments, the step of annealing of the present teachingscomprises mixing, using one or more producing mass flow controls,certain amounts of one or more types of component gases stored insideone or more reservoirs, to produce the annealing gas composition. Thestep of annealing, preferably, then involves activating an annealingcontrol valve, that is communicatively coupled, at one end, to one ormore of the annealing mass flow controls, and communicatively coupled,at another end, to multiple sets of gas dispensing apertures disposedinside one of a processing sub-enclosure. As a result, the step ofannealing, preferably, includes conveying the annealing gas compositionfrom one or more of the reservoirs to the processing sub-enclosure tocarry out the step of annealing. In this arrangement, one set of gasdispensing apertures are separated a lateral separating distance fromanother set of gas dispensing apertures. Further, the step of annealingthen includes creating an annealing environment by using heat generatedfrom one or more heat sources and using the annealing gas compositionthat diffuses into a region, extending at least the lateral separatingdistance, inside the processing sub-enclosure.

In one exemplar assembly of components in the step of producing, atleast one of the producing mass controls is communicatively coupled toone of the reservoirs of argon gas and communicatively coupled toanother of the reservoirs of methane gas and/or hydrocarbon that is notnecessarily in gaseous state, but that forms a producing compositioninside a processing sub-enclosure. In this configuration, the producingcontrol valve is communicatively coupled, at one end, to the producingmass flow control, and communicatively coupled, at another end, tomultiple sets of gas dispensing apertures. Further, the gas dispensingapertures are disposed inside the processing sub-enclosure serving as aproducing (graphene) sub-enclosure. In an operational state of theexemplar assembly of components involved, at least one of the producingmass controls—effectively controls an incident flow rate of theproducing composition inside the processing sub-enclosure.

The present teachings contemplate that prior to the step of producing,the second surface, preferably undergoes annealing. To this end, thepresent methods, preferably, further comprise a step of initiallyannealing, in presence of the annealing gas composition, a non-annealedsurface of the substrate sheet to produce the second surface forprocessing. The step of initially annealing of the non-annealed surfaceof the substrate sheet is carried out prior to the step of annealing ofthe first surface for processing and the step of producing of the secondsurface for processing.

In yet another aspect, the present teachings provide yet other types ofmethods for producing graphene. One exemplar of such methods comprisesdisplacing a surface, a producing range of lateral distance inside anenclosure. In certain embodiments, the producing range of lateraldistance of the present teachings includes an initial producing laterallocation or region, disposed a lateral distance away therefrom, anintermediate producing lateral location or region and, disposed alateral distance away therefrom, a subsequent producing lateral locationor region.

These methods further include exposing, during the displacing of thesurface inside the enclosure, the surface to a substantially constanttemperature along with the producing range of lateral distance. Incertain embodiments, the exposing step of the present teachings includesusing multiple heat sources, extending the producing range of lateraldistance, preferably, disposed outside the enclosure, but adjacent tothe surface. In this configuration, the surface is exposed to asubstantially constant temperature along the producing range of lateraldistance inside the enclosure.

These methods further include subjecting, during the displacing of thesurface inside the enclosure, the surface to a producing incident flowrate profile of a substrate gas scavenging composition that varies as afunction of a lateral distance displaced within the producing range oflateral distance inside the enclosure. In certain embodiments, thesubjecting step includes using multiple gas distribution systemsdelivering the producing composition to the producing range of lateraldistance inside the enclosure. In this configuration, a substantiallyconstant incident flow rate is applied to the surface when it ispositioned at the initial producing lateral location or region. Further,a first maximum incident flow rate is applied to the surface when it ispositioned at the intermediate producing lateral location or region.Further still, a second maximum incident flow rate is applied to thesurface when it is positioned at the subsequent producing laterallocation or region. In one implementation of the present teachings, thesecond maximum is greater than the first maximum. These producing stepsare carried out contemporaneously.

The producing range of lateral distance may range from about 100 mm toabout 4000 mm. The producing temperature may range from about 600° C. toabout 1100° C. and in a more preferred embodiment from about 900° C. toabout 1100° C. The substantially constant incident flow rate of theproducing composition, e.g., CH₄ gas, at the initial producing laterallocation or region may range from about 0.5 liters/minute to about 4.5liters/minute. The first maximum incident flow rate of the producingcomposition at the intermediate producing lateral location or region mayrange from about 5 liters/minute to about 20 liters/minute. The secondmaximum incident flow rate of the producing composition at thesubsequent producing lateral location or region may range from about 5liters/minute to about 20 liters/minute.

In preferred embodiments of the present teachings, at least three orfour producing gas distribution subsystems are laterally disposed withineach of the initial producing location or region, the intermediateproducing location or region and the third producing location or region.

The exemplar method further comprises, prior to the step of producing, astep of initially annealing the surface for processing. During the stepof displacing an annealing range of lateral distance, the step ofinitially annealing the surface of processing is carried out. Theproducing range of lateral distance preferably starts at an end of theannealing range of lateral distance inside the enclosure.

In yet another aspect, the present teachings provide methods for forminggraphene. One exemplar of such methods comprises: (1) a step ofscavenging, in presence of a substrate gas scavenging composition and ascavenging temperature, a substrate sheet to produce a partiallycontamination-depleted surface; (2) a step of annealing, in presence ofthe substrate gas scavenging composition and/or an annealing gascomposition and an annealing temperature, the substrate sheet to producean annealed surface; (3) a step of producing graphene, in presence of anproducing composition and an annealing temperature, the substrate sheetto produce a graphene deposited surface; and (4) a step of cooling, inabsence of an active heat source disposed adjacent to the substratesheet and in presence of the substrate gas scavenging composition, thesubstrate sheet to produce a relatively cool surface.

In preferred implementations, the step of scavenging, the step ofannealing, the step of producing and the steps of cooling are carriedout on a same surface for processing on the substrate sheet. In theseimplementations, the step of cooling is carried out after the step ofproducing, which is carried out after the step of annealing, which inturn, is carried out after the step of scavenging.

In certain embodiments of the present teachings, the step of scavengingis carried out on a first surface for processing, the step of annealingis carried out on a second surface for processing, the step of producingis carried out on a third surface for processing and the step of coolingis carried out on a fourth surface for processing. In these embodiments,the first, the second, the third and the fourth surfaces for processingare different (locations and/or regions) from each other. Further, thestep of scavenging, the step of annealing, the step of producing and thestep of cooling are, preferably, carried out contemporaneously torealize high yield and high throughput for graphene formation.

The exemplar method, preferably, contemplates that the substrate sheetlaterally extends within a laterally extending enclosure. In an exemplarcontinuous mode of operation, the exemplar method further comprises astep of displacing the substrate sheet inside a laterally extendinginfeed portion that is positioned upstream from the enclosure, and thestep of scavenging includes, during the step of displacing of thesubstrate sheet, using a substrate gas scavenging composition on asurface for processing to at least remove substrate gas in around thesubstrate sheet. In other words, as the substrate sheet undergoesdisplacement inside the infeed portion, it contemporaneously undergoesscavenging to remove substrate gases that are present therewithin andtherearound.

The present teachings recognize that other steps may be similarlycarried out in this continuation mode of operation to realize high yieldand high throughput for graphene formation. By way of example, theexemplar method comprises a step of moving the surface for processing anannealing range of lateral distance, and the step of annealing includes,during the step of moving of the substrate sheet or contemporaneous withthe step of moving of the surface of processing, using a localizedannealing environment produced within the annealing range of lateraldistance inside the enclosure and the annealing range of lateraldistance starts at an end of the scavenging range of lateral distance.

As another example, the exemplar method comprises a step of advancingthe surface for processing a producing range of lateral distance, andthe step of producing includes, during the step of advancing of thesubstrate sheet or contemporaneous with the step of advancing of thesurface for processing, using a localized producing environment formedwithin the producing range of lateral distance inside the enclosure andthe producing range of lateral distance starts at an end of theannealing range of lateral distance.

As yet another example, the exemplar method comprises a step ofconveying the surface for processing a cooling range of lateraldistance, and the step of cooling includes, during the step of conveyingor contemporaneous with the step of conveying of the surface forprocessing, cooling the surface for processing using a localized coolingenvironment within the producing range of lateral distance inside theenclosure, and the cooling range of lateral distance starts at an end ofthe annealing range of lateral distance.

The exemplar method may contemplate a step of relocating the surface forprocessing from the enclosure to a laterally extending outfeed portionlocated downstream from the enclosure. In this circumstance, theexemplar method may comprise additionally cooling, during the step ofrelocating to the laterally extending outfeed portion or contemporaneouswith the step of relocating of the surface for processing, the surfacefor processing using one or more heat sinks that remove heat from thesurface for processing.

The construction and method of operation of the invention, however,together with additional objects and advantages thereof, will be bestunderstood from the following descriptions of specific embodiments whenread in connection with the accompanying figures.

BRIEF DESCRIPTION

FIG. 1 shows a perspective view of a continuous graphene formationsystem, according to one embodiment of the present arrangements,including an infeed portion, a furnace, and an outfeed portion.

FIG. 2 shows a perspective, cutaway view of the infeed portion of thecontinuous graphene formation system of FIG. 1 .

FIG. 3A shows a perspective, cutaway view of the outfeed portion,assembled using certain repeating sub-enclosures, of the continuousgraphene formation system of FIG. 1 .

FIG. 3B shows a perspective, cutaway view of the sub-enclosure of theoutfeed portion of FIG. 1 .

FIG. 4A shows a side cross-sectional view of the furnace of FIG. 1 andassembled using repeating furnace sub-structures.

FIG. 4B shows a side-sectional view of a single furnace sub-structure ofFIG. 4A.

FIG. 5 shows a perspective, cutaway view of the furnace of FIG. 4A andan assembly of different components disposed therewithin.

FIG. 6A shows a side view of the single furnace sub-structure of FIG. 4Band an assembly of components including a portion of an enclosure (e.g.,an assembly of muffles in series) having defined therewithin an opening,through which a substrate is conveyed for producing graphene thereon.

FIG. 6B shows a side view of a sub-enclosure, which is part of theenclosure of FIG. 6A (certain details not shown to simplifyillustration), being fitted with multiple gas nozzles, each of which ispart of a gas distribution system that provides a processing gas, e.g.,annealing gas composition or producing composition including ahydrocarbon that is not necessarily gaseous, inside the sub-enclosure.

FIG. 7 shows a block diagram of a portion of multiple gas distributionsystems that include mass flow controllers and control valves thatdeliver appropriate amounts of component processing gases and/or one ormore hydrocarbons (that are not necessarily gaseous) at variouslocations inside the enclosure of FIG. 4A.

FIG. 8A shows a perspective, cutaway view of a gas injection platedisposed above the sub-enclosure of FIG. 6B and represents a portion ofa processing material flow path from one or more gas or non-gaseousreservoirs to the interior of the sub-enclosure of FIG. 6B.

FIG. 8B shows a perspective, cutaway view of the glass injection plateof FIG. 8A having defined therein multiple gas flow networks and shows aportion of the sub-enclosure of FIG. 6B that includes a gas dispensingsurface.

FIG. 9 shows a perspective view of multiple sub-enclosures assembled inseries, wherein a first cutaway view of the first sub-enclosure revealsmultiple sets of gas dispensing apertures defined on a gas dispensingsurface of the first sub-enclosure and a second cutaway view of thesecond sub-enclosure reveals the processing gas flow networks that aredisposed above and communicatively coupled to the adjacent gasdispensing apertures, wherein both the gas dispensing apertures and thegas flow networks combine to form a portion of the processing materialflow path from one or more gas or non-gaseous reservoirs to the interiorof the sub-enclosure of FIG. 6B.

FIG. 10A shows a perspective view of the assembly of multiplesub-enclosures of FIG. 9 and that each sub-enclosure is fitted withmultiple gas nozzles as conveyed by FIG. 6B.

FIG. 10B shows a perspective view of the assembly of multiplesub-enclosures of FIG. 9 and a portion of the processing material flowpath defined inside the sub-enclosure, through an associated gasinjection plate and ultimately to the interior of the sub-enclosure ofFIG. 6B.

FIG. 10C shows in greater detail the portion of the processing materialflow path shown in FIG. 10B.

FIG. 11 shows a side view of a connecting location between twosub-enclosures and the connecting components involved for couplingmultiple sub-enclosures in series to form the enclosure disposed insidethe furnace shown in FIG. 4A.

FIG. 12 shows a flowchart of a method for processing, according to oneembodiment of the present teachings, a substrate for graphene formationincluding scavenging substrate gases on a first surface of the substrateand annealing a second surface of the substrate.

FIG. 13 shows a flowchart of a method for annealing, according to oneembodiment of the present teachings, including pretreating and treatingthe second surface.

FIG. 14 shows another flowchart of another method for annealing,according to an alternate embodiment of the present teachings, includingpretreating, treating, and passivating the second surface.

FIG. 15 shows a flowchart of a method for scavenging, according to oneembodiment of the present teachings, including advancing the firstsurface of the substrate a certain lateral distance and scavenging thefirst surface, during the advancing step, using a substrate gasscavenging composition.

FIG. 16 shows a flowchart of a method for pretreating, according to oneembodiment of the present teachings.

FIG. 17 shows a flowchart of a method for treating, according to oneembodiment of the present teachings.

FIG. 18 shows a flowchart of a method for passivating, according to oneembodiment of the present teachings.

FIG. 19 shows a flowchart of a method for producing, according to oneembodiment of the present teachings, graphene on a substrate surface.

FIG. 20 shows a flowchart of a method for processing, according to oneembodiment of the present teachings, a substrate surface for effectivelyproducing graphene thereon.

DETAILED DESCRIPTION

In the following description numerous specific details are set forth toprovide a thorough understanding of the present invention. It will beapparent, however, to one skilled in the art that the present inventionmay be practiced without limitation to some or all these specificdetails. By way of example, advantages of high throughput and high yieldoffered by the present arrangements and present teachings are realizedin a batchwise approach to graphene formation and are not limited to thedifferent embodiments of the continuous approach described herein. Asanother example, certain embodiments are described in terms ofprocessing gases, but the present teachings recognize that reservoirs,gas nozzles, gas dispensing apertures or flow paths may have storedtherein and/or convey non-gaseous processing materials that transforminto a gaseous state during processing. In other instances, well knownprocess steps have not been described in detail to not unnecessarilyobscure the invention.

As explained above, a conventional approach of graphene formation thatrelies upon multiple isolated treatment units suffers from severaldrawbacks. The present teachings recognize that one such drawback isthat the entire substrate surface undergoing processing inside a singletreatment unit is subjected to a single set of operating conditions.Under this approach, even if a conveyor displaces the substrate surfacefrom one treatment unit to another, the outcome is undesirable, i.e.,the entire substrate surface is subjected to a single set of operatingconditions. The present teachings recognize that another conventionalapproach that changes operating conditions, inside a single treatmentunit, one condition at a time also suffers from the same drawback as thesubstrate surface is subjected to a single set of operating conditions.

Against this backdrop, the present arrangements and present teachingsare not so limited as they offer numerous embodiments that providestructural provisions for implementing and/or implement multiple sets ofoperating conditions inside the same treatment unit and/orsimultaneously inside different treatment units. Accordingly, thepresent systems and methods offer high yields and high throughputs forgraphene formation that are not realized by conventional approaches ofgraphene formation.

FIG. 1 shows a continuous graphene formation system 100, according toone embodiment of the present arrangements, including an infeed portion200, a furnace 300, and an outfeed portion 400. Each of infeed portion200, furnace 300 and outfeed portion 400 extends a certain lateraldistance, i.e., a certain distance along the X-axis as shown in FIG. 1 .In this embodiment, continuous graphene formation system 100,accordingly, extends a total lateral distance, which is a sum of thelateral distances that its component subsystems extend. As explainedbelow, as a substrate, upon which graphene is produced, travels thistotal lateral distance it undergoes different types of processing atdifferent lateral locations, e.g., different distance values on theX-axis. Stated another way, certain structural provisions and/orprocessing features provided by the present arrangements and teachingsare a function of (or depend upon) the lateral location, e.g., distancevalue on the X-axis.

In one embodiment, a substrate is fed through infeed portion 200. As thesubstrate travels a lateral distance of infeed portion 200, itencounters certain localized processing conditions, e.g., scavengingconditions. The present arrangements and teachings provide certainstructural provisions and processing features, along the lateraldistance of infeed portion 200, to effectively prepare the substrate,prior to downstream processing, by removing or scavenging contaminants(e.g., gas contaminants present in or around the substrate).

Upon the substrate's arrival inside or after a small amount of lateraldistance inside one end of furnace 300, it is subjected to hightemperatures (e.g., about 500° C. and above) for additional processingto create a substantially clean substrate surface, i.e., acontaminant-depleted substrate surface. The present teachings recognizethat creating a contaminant-depleted substrate surface, prior toproducing graphene on the substrate surface, provides a high yieldgraphene producing systems and methods. Building on this recognition,the present arrangements and the present methods of graphene formationcontinue to provide certain laterally disposed structural provisions andprocessing features inside furnace 300 and outfeed portion 400 torealize-significantly high yields and high throughput of grapheneformation. Conventional graphene producing systems and methods fail torecognize these advantages of the present teachings, much less offersuch structural provisions and processing features.

By way of example, as the contaminant-depleted substrate surfacedisplaces another lateral distance inside the same furnace 300, itundergoes, at certain lateral locations, certain novel processing steps,according to the present teachings, associated with annealing to producean annealed surface.

Further, the annealed surface is laterally conveyed yet another lateraldistance inside the same furnace, for production, thereon, of graphenehaving the desired characteristics for its intended commercialapplication. Again, structural provisions and processing features of thepresent arrangements and the present teachings implement, at certainlateral locations, certain novel processing steps associated withproduction of the requisite quality of graphene. After production ofgraphene has concluded, cooling of the substrate surface begins.

Preferably, cooling of the substrate surface, with graphene depositedthereon, commences when the substrate is still present inside the samefurnace and near outfeed 400 and concludes near or at the end of outfeed400. Thus, the substrate surface with graphene deposited thereon isconveyed yet another lateral distance that starts from inside furnace300 and extends to the end of outfeed 400. Novel structural provisionsand processing features, at certain lateral locations within thislateral distance from furnace 300 to outfeed 400, provided by thepresent arrangements and the present teachings implement cooling of thesubstrate surface immediately, e.g., on the order of a few seconds,after graphene is deposited thereon. Rapid cooling, after production, ofgraphene allows for effective downstream recovery of the adheringgraphene from the adjacent substrate surface to realize a high yield andhigh throughput for graphene formation.

Further, structural provisions and processing features of the presentarrangements and the present teachings do more than offer high yield andhigh throughput for graphene formation. In the absence of a gas or amechanical barrier within and between the different componentsubsystems, the present arrangements and the present teachings preventor minimize both cross-contamination and cross-interference between thedifferent types of processing of the substrate being carried out insidecontinuous graphene formation system 100. To facilitate a detaileddescription, FIGS. 2, 3A, 3B, 4A, 4B, 5, 6A, 6B, 7, 8A, 8B, 9, 10A, 10Band 11 show the salient structural provisions offered by the presentarrangements and FIGS. 12-20 describe the major steps involved in theprocessing features of the present teachings.

FIG. 2 shows certain salient components inside infeed portion 200including rollers 202, a belt drive system 204, a substrate roll 206, aflexible bellows joint 208, tunnels 210, multiple pallets 212, a chillerplate 214, gas curtains 216, and a chiller block 218.

During an operational state of graphene formation system 100, rollers202, operating under a gravitational force, advance a substrate holdercomprising multiple pallets 212 towards a location underneath asubstrate roll 206. In certain embodiments, a continuous drive system ofthe present arrangements, e.g., belt drive system 204, direct push drivesystem, rack and pinion system or chain drive system, preferably, drivesor rotates a subassembly of multiple rollers, e.g., rollers 202, toadvance pallets 212 towards a location underneath a substrate roll 206.In one embodiment, rollers 202 of the present arrangements are cogs thatfit into a complementary structure on pallets 212, which are preferablymade from graphite to withstand high levels of heat present inside anenclosure within furnace 300.

In this operational state, substrate roll 206, that may be controlled bya servo motor and an ultrasonic sensor detecting slack loop, dispensesan appropriate length of a substrate sheet that is disposed on andlaterally extends (i.e., extends in the X-direction) upon pallets 212.In one embodiment, the substrate holder in the present arrangements is asingle continuous belt that preferably laterally extends the totallateral distance of continuous graphene formation system 100.

Regardless of whether pallets 212 or a continuous belt are/is used as asubstrate holder, the present teachings recognize that the roll outmotion of substrate roll 206 is not always dictated by a continuousmotion of the advancing pallets 212 but that the forward movement of thelaterally extending substrate sheet is dictated by the supporting,advancing pallets. In an alternative design of infeed portion 200 of thepresent arrangements, a speed matching system is employed for matchingforward substrate holder speed with a linear amount of the substratesheet unrolled per unit time.

In certain embodiments of the present arrangements, the pallets (e.g.,substantially similar in form to pallets 212 of FIG. 2 ) are stationaryand are not in motion as mentioned above in connection with FIG. 2 . Inthese “stationary” embodiments of the substrate holder of the presentarrangements, the supported substrate sheet is unrolled from substrateroll 206 and displaced above the stationary pallets. In preferredimplementations of these arrangements, substrate roll 206 may rely on atleast one of the above-described components, e.g., servo motor, sensorfor slack loop detection and speed matching, for an effective roll outof the substrate sheet.

Inside infeed portion 200, the advancing substrate sheet is protectedfrom ambient conditions and contaminants by tunnels 210 positioned aboveand around a linear rail system. Approximate a location of a firsttunnel, i.e., the tunnel closest to substrate roll 206 and furthest fromfurnace 300, flexible bellows joint 208 is provided to allow forexpansion of tunnel 210 when high levels of heat escapes, as explainedbelow, from furnace 300 of FIG. 2 towards tunnels 210. On the lasttunnel, i.e., the tunnel furthest from substrate roll 206 and closest tofurnace 300, preferably, chiller plate 214 is disposed to remove theheat escaping in the negative lateral direction, i.e., in the negativeX-direction, from furnace 300 and thereby prevent melting or degradingof upstream components, e.g., substrate holder, linear track, tunnels,and the substrate.

In the present arrangements of an infeed portion 200, multiple tunnels210 are arranged in series on and around a supporting linear rail systemto create an enclosed environment. Pallets 212 are arranged adjacent tothe linear rail system, which allows for expansion of the tunnelwithstand the high levels of heat escaping from furnace 300 of FIG. 1 .Further, each tunnel 210 is flanked by a gas curtain 216. In thisconfiguration, multiple repeating structural units, each includingtunnel 210 and gas curtain 216, are contiguously arranged to form infeedportion 200. Each such repeating structural unit is referred herein toas a “scavenging sub-enclosure” because of the gas scavenging conditionspresent therein. Specifically, the surface of substrate sheet(hereinafter referred to as the “substrate surface”) includes or hasdisposed around it “substrate gas” and the scavenging sub-enclosure hasconditions to scavenge the substrate gas. The present teachingsrecognize that, to those skilled in the art, certain presentarrangements of the scavenging sub-enclosure may be seen as a degassingsubsystem that creates a degassing environment for the substrate.

To this end, gas curtain 216 is disposed on scavenging sub-enclosuresand specifically, between two infeed tunnels 210, disposed in series andthat isolate contents inside infeed tunnels 210 from the ambientenvironment. One or more gas curtains 216 may be part of one or morescavenging gas distribution systems that provide a substrate gasscavenging composition, from one or more reservoirs containing thesubstrate gas scavenging composition, to locations inside one or moretunnels 210. In this configuration, gas curtain 216 includes one or moredirectional scavenging gas outlets that are oriented to direct at leastsome portion of the stream of substrate gas scavenging composition toflow inside infeed tunnels 210 in one or more different directions. Byway of example, directional scavenging gas outlets may be one or morelaterally-oriented gas outlets and one or more angularly-oriented gasoutlets. The multiple laterally-oriented gas outlets are oriented in adirection that is parallel to the substrate holder and the multipleangularly-oriented gas outlets are oriented in a direction that is at anangle to an axis perpendicular to the substrate holder. Thelaterally-oriented gas outlet, in an operational state, protects thesubstrate sheet from contaminants present around the substrate sheet bygenerating a laterally flowing stream of the substrate gas scavengingcomposition. The angularly-oriented gas outlet, in an operational state,generates and directs an angularly flowing stream of the substrate gasscavenging composition to contact the substrate sheet.

Further, one or more of the directional curtain outlets generate one ormore streams of substrate gas scavenging composition to direct thesubstrate gas scavenging composition and the annealing gas composition,flowing from furnace 300 into the infeed tunnels, towards an exit ofinfeed portion 200, i.e., an opening in infeed portion that is away fromfurnace 300. The gas streams and the outflowing gases prevent orminimize flow of ambient gases inside infeed tunnels 210. As a result,not only do scavenging sub-enclosures scavenge the substrate gascomposition, but also prevent contaminants from settling on or reactingwith the substrate surface.

In preferred embodiments, infeed portion 200 of the present arrangementsincludes one or more scavenging gas stream generating subsystems, eachof which provides a substrate gas scavenging composition at appropriateflow rates (which dictates the scavenging composition's pressure inside)to multiple scavenging gas outlets. In this configuration, at least onescavenging gas outlet is arranged at a first corresponding locationinside the different scavenging sub-enclosures. A collection of thescavenging gas outlets arranged at the first corresponding locationinside each of the different scavenging sub-enclosures comprise a firstset of scavenging gas outlets. The substrate gas scavenging compositionstreams produced from the first set of scavenging gas outlets arecombined to form a first continuously flowing substrate gas scavengingcomposition stream that spans across multiple scavenging sub-enclosures.The present teachings recognize that inside each of the differentscavenging sub-enclosures, there are present multiple sets of suchcorresponding locations (e.g., a top left corner location insidemultiple tunnels 210, or a top right corner location inside multipletunnels 210) where scavenging gas outlets may be arranged to formmultiple sets of correspondingly located scavenging gas outlets. Inpreferred embodiments of the present teachings, multiple sets ofcorrespondingly located scavenging gas outlets, accordingly, producemultiple continuously flowing substrate gas scavenging compositionstreams across multiple scavenging sub-enclosures.

Multiple continuously flowing scavenging gas streams of the presentteachings effectively strip the substrate gas from the substrate surfaceand evacuate contents, such as argon gas and degassed material from thesubstrate surface, present inside infeed tunnels 210 and the scavengingsub-enclosures. Moreover, these multiple continuously flowing scavenginggas streams serve as an even more of a protective barrier, preventingsurrounding contaminants from contacting the substrate surface, andserve as an even more of a scavenger of the substrate gas to produce asubstrate-gas-depleted surface than a single scavenging gas stream. Thepresent teachings recognize, however, that a scavenging sub-enclosure ofthe present arrangements is not limited to the configuration shown inFIG. 2 and may be of many include different components in differentconfigurations.

Regardless of the configuration of the scavenging sub-enclosure, anappropriate value for a feed rate of the substrate sheet ensures that,if not all, at least appreciable amounts of oxygen present in and aroundthe substrate surface is depleted from the substrate surface such thatoxygen concertation in and around the substrate surface inside the lasttunnel, before entering furnace 300, ranges from between about 5 ppm toabout 100 ppm. Depending on the length of tunnels 210, and to facilitatepresence of such low levels of oxygen in and around the substratesurface, pallets 212 are, preferably, advancing at a rate that rangesfrom about 1 mm/second to about many tens of mm/second (e.g., about 15mm/second, about 20 mm/second, about 30 mm/second). Further, there maybe one or more oxygen sensors and preferably, three oxygen sensors,provided at the bottom and/or top of the last tunnel before furnace 300to ensure that oxygen concentration of the substrate and/or inside thelast tunnel is at the requisite low level.

Like infeed portion 200, outfeed portion 400 is made from arrangingmultiple repeating structural units referred herein to as an “outfeedsub-enclosure.” Further, outfeed portion 400 includes one or more inertgas stream generating subsystems, each of which provides an inert gas atan appropriate pressure to multiple outfeed gas outlets. Each outfeedgas outlet, in turn, generates an inert gas stream inside an associatedoutfeed sub-enclosure. By way of example, outfeed gas outlets may be oneor more laterally-oriented outfeed gas outlets and one or moreangularly-oriented outfeed gas outlets. The multiple laterally-orientedoutfeed gas outlets are oriented in a direction that is parallel to thesubstrate holder and the multiple angularly-oriented outfeed gas outletsare oriented in a direction that is at an angle to an axis perpendicularto the substrate holder. The laterally-oriented outfeed gas outlet, inan operational state, protects the substrate sheet from contaminantspresent around the substrate sheet by generating a laterally flowingstream of the substrate gas scavenging composition. Theangularly-oriented gas outlet, in an operational state, generates anddirects an angularly flowing stream of the substrate gas scavengingcomposition to contact the substrate sheet.

The present teachings recognize that inside each of the differentoutfeed sub-enclosures, there are present multiple sets of correspondinglocations where outfeed gas outlets may be arranged to form multiplesets of correspondingly located outfeed gas outlets. Each set ofcorresponding outfeed gas outlets is combined to produce a continuouslyflowing inert gas stream that spans across multiple scavengingsub-enclosures. In preferred embodiments of the present teachings,multiple sets of correspondingly located outfeed gas outlets producemultiples of such continuously flowing inert gas streams across multiplescavenging sub-enclosures. Further, some of these outfeed gas outletsare oriented to direct at least some portion of the inert gas stream toflow inside infeed tunnels 210, over the substrate surface and in alateral direction away from furnace 300 and towards an opening inoutfeed portion 400. A significant amount of heat is removed from thesubstrate, as explained below, using heat sinks and the continuouslyflowing inert gas stream from the outfeed gas outlets furtherfacilitates substrate cooling and prevents contaminants from beingintroduced on the graphene and the substrate surface.

FIGS. 3A and 3B show one preferred embodiment of outfeed portion 400that includes multiple tunnels 410, which are arranged serially anddisposed adjacent to, e.g., on, below and/or around, a linear railsystem. Each tunnel 410 has disposed thereon, thereunder and/ortherearound chiller plates, e.g., top chiller plates 414A resting on topof each tunnel 410 and bottom chiller plates 314B contacts a bottomportion of the outfeed sub-enclosure. These chiller plates arepreferably made from an efficient thermal conductor and are, morepreferably, made from aluminum. In this figure, pallets 412 rest on aheat sink 422 (e.g., preferably made from a good thermal conductor andmore preferably made from copper) to further remove heat from pallet412.

Like infeed portion 200, rollers are also present at outfeed portion 400for taking up the substrate sheet. Furthermore, pressure pads may beused in conjunction with the rollers, present at infeed portion 200 andoutfeed portion 400, for controlling the substrate roll out and take up.Further, when a speed matching system is employed at the infeed formatching forward pallet speed with the linear amount unrolled, a finalsection of the rail system at the outfeed is, preferably, speedcontrolled to control the tension of the overlying substrate sheet,i.e., ensure that the substrate sheet, extending out of the furnace andinto outfeed portion 400, is at a requisite level of tension for properretrieval of the graphene formed on the substrate sheet. Such speedcontrol features in the present arrangements are desirable for achievinghigh yields and high throughput for graphene formation.

In certain preferred embodiments of the present arrangements, outfeedportion 400 includes an exhaust pump 420 for pulling scavenging gas thatis present inside the outfeed tunnels 410. Although not shown tosimplify illustration in FIG. 2 , infeed portion 200 may includeprovisions similar to exhaust pump 420 to scavenge substrate gas.

The above-mentioned provisions provided at outfeed portion 400, forrapidly cooling and the subsequent heat and or gas removal from outfeedtunnels 410, provide for efficient and effective downstream removal ofgraphene from the substrate surface and therefore offer high throughputand high yield when deploying the present systems and methods forgraphene formation.

According to FIG. 4A, a furnace 400, according to preferred embodimentof the present arrangements, spanning a lateral distance “L” is made bycontiguously arranging multiple repeating furnace sub-structure units302 of lateral distance “d,” where n*d=L, and n is a whole number. Inthis configuration, an enclosure 512, disposed inside furnace 300,similarly extends a lateral distance “L.” FIG. 4B shows in greaterdetail furnace sub-structure unit 302 as including heating coils 304,top main purge tube inlets 306A, bottom main purge tube inlets 306B,exterior lid 308, 310 interior lid, sub-enclosure 312, bottom component314 and 316 thermocouples.

Multiple sub-enclosures 312 are contiguously arranged to form anenclosure 512 inside furnace 300 that extends the lateral distance “L.”Depending on the type of processing implemented, different processinggases, e.g., substrate gas scavenging composition, annealing gascomposition, producing composition or cooling air or gas, are providedinside one or more different sub-enclosures 312 to create a localizedprocessing environment, e.g., scavenging environment, annealingenvironment, producing environment or cooling environment, inside theenclosure and the desired type of processing is carried out at arequisite temperature to form or produce graphene on the substratesurface. One or more heat sources, e.g., a plurality of heating coils,are arranged to span the lateral distance “L,” and are disposed on topand/or bottom of enclosure 312 to heat certain portions or a particularportion thereof, preferably a middle portion of enclosure 512 orsub-enclosures 312 that are disposed in the middle portion of enclosure512, to a requisite temperature for carrying out different types ofprocesses therein.

In preferred embodiments of the present arrangements, infeed portion200, furnace 300 and outfeed portion 400 that include appropriate onesof the above-mentioned localized environments inside them do so in theabsence of any physical barriers between and within them. The presentteachings consequently recognize that heat, air and/or gas, which may becrucial in creating a desired type of localized processing environment,may undesirably bleed into and interfere with another or an adjacentlocalized processing environment. As a result, in connection withstructural features present in FIGS. 2, 3A, 3B, 4A and 4B and methodspresented in FIGS. 12-19, for example, the present teachings describethe manner in which these structural features and carefully selectedprocessing parameters, implemented in creating adjacently disposedlocalized processing environments inside continuous graphene formationsystems 100 of FIG. 1 , minimize the effects of any such bleeding orinterference, if it was to occur. Thus, the present arrangements andmethods represent a low capital cost design that offers significantlyhigh throughput and high yields for graphene formation.

FIG. 4B shows that each furnace sub-structure 302 includes one or moreshields surrounding furnace 300. In the embodiment shown in FIG. 4B, abottom component 314 is disposed below, i.e., in a negative Z-direction,relative to sub-enclosure 312. The bottom component 314 serves as baseand is capable of supporting one or more lids thereon. By way ofexample, interior lid 310 is disposed on a first leg protruding, i.e.,in a positive Z-direction, from bottom component 314 and exterior lid308 is disposed on a second leg also protruding from bottom component314. In this configuration, exterior lid 308 is disposed above, i.e., inthe positive Z-direction from, interior lid 310. In this configuration,exterior lid 308 and interior lid 310 extend a lateral distance and acombination of bottom component 314 and exterior lid 308/interior lid310 have defined therein two laterally extending (i.e., in theX-direction) gas purge paths, i.e., an exterior gas purge path definedfrom the assembly of bottom component 314 and exterior lid 308 and aninterior gas purge path defined from the assembly of bottom component314 and interior lid 310. Inside furnace 300, processing gases thatescape from one or more sub-enclosures 312 and collect inside furnace300 are purged using one or more such gas purge paths.

A purge gas stream made from an inert or reducing gas composition,introduced inside the interior gas purge path, purges processing gasesor contaminants that may have escaped from and collected inside thecavity defined by the assembly of bottom component 314 and interior lid310. This purging prevents the undesired processing gases orcontaminants, generated during a particular type of processing, fromflowing towards, being reintroduced at another location inside enclosure512, and interfering with another type of processing being implementedat that location. As another preventive measure, the presentarrangements allow for purging processing gases and contaminantsescaping from the interior gas purge path into the exterior gas purgepath. To achieve effective purging, an inert gas stream is introducedinside the exterior gas purge path created inside a cavity resultingfrom the assembly of bottom component 314 and exterior lid 308.

Furnace substructure unit 302 may further include top and bottom mainpurge tube inlets 306A and 306B to keep escaped processing gases andcontaminants away from and not collecting around heat sources 304 andthermocouples 316. Thermocouples 316 are used for measuring thetemperature proximate heat sources 304 to gain an understanding of theprocessing temperature values that might be present inside one or moresub-enclosures 312. Further, based on the measurements obtained fromthermocouples 316, the present teachings may operate heat sources 304 toprovide the desired temperature values inside one or more sub-enclosures312. Collection of extraneous materials, such as processing gases andcontaminants may not only interfere with these objectives but also, overa period of time, degrade heat sources 304 and thermocouples 316,further exacerbating these objectives.

In preferred embodiments, exterior lid 308, interior lid 310 and bottomcomponent 314 of the present arrangements are made from efficientthermally stable materials, e.g., advanced ceramics. Further, thesecomponents may be commercially available from Blasch Precision CeramicsInc. of Menands, New York.

FIG. 5 shows a cutaway view of furnace 300 of FIG. 4A exposing anassembly of different internal components including an upper insulation502, heating coils 504, lower insulation 510, enclosure 512 (previouslyshown in FIG. 4A), bottom component's protruding exterior leg 514, gasinjection nozzles 520. In this embodiment, heating coils 504 are servingas heat sources 304 of FIG. 4B. Exterior lid 308 is disposed abovebottom component's protruding exterior leg 514 to form an exteriorencasing of enclosure 512 and defines the exterior gas flow pathdescribed above for purging processing gases and contaminants.Insulation, e.g., upper insulation 502 and lower insulation 510, preventundesired dissipation of heat generated from heating coils 504 to theenvironment and ensure that most, it not all, of this heat is used forprocessing inside enclosure 512.

FIG. 6A shows a side view of furnace 300′, which is substantiallysimilar to furnace 300 of FIGS. 1, 3 and 5 , except furnace 300′ of FIG.6A is oriented to clearly show the arrangements involved in an enclosureand gas distribution subassembly 600, including an enclosure 612, whichis substantially similar to enclosure 512 of FIGS. 4A and 5 . FIG. 6Bmore clearly shows the details surrounding enclosure 612 of FIG. 6A.According to FIG. 6B, a bottom component 614 has two protruding legs,i.e., an exterior protruding leg (substantially similar to exteriorprotruding leg 514 of FIG. 5 ) and an interior protruding leg, anexterior lid 608 (which is substantially similar to exterior lid 308 ofFIG. 4B) disposed on top of the exterior protruding leg and an interiorlid 610 (which is substantially similar to interior lid 310 of FIG. 4B)disposed on top of the interior protruding leg.

FIG. 6B shows enclosure and gas distribution subassembly 600 alsoinclude certain provisions inside a single enclosure 612 for gasdistribution, such as two or more gas injection nozzles, i.e., a firstgas injection nozzle 620 and a second gas injection nozzle 620′, andeach of them including, at one end, two or more inlets, e.g., a firstinlet 622 and a second inlet 624 for first gas injection nozzle 620 and,correspondingly, a first inlet 622′ and a second inlet 624′ for secondgas injection nozzle 620′. Preferably, first inlets 622 and 622′ areconfigured to provide one type of processing composition and secondinlets 624 and 624′ are configured to provide another type of processingcomposition. At another end, a tip of each of gas injection nozzles 620and 620′ is coupled to their respective nozzle-receiving inlets, e.g., afirst nozzle-receiving inlet 626 and a second nozzle-receiving inlet626′, respectively. In the embodiment of FIG. 6B, single enclosure 612has disposed thereon a gas injection plate (e.g., a gas injection plate850 or 850′ shown in FIGS. 8A and 8B, respectively) that has definedtherein two or more nozzle-receiving inlets, e.g., nozzle-receivinginlets 626 and 626′, communicatively coupled to two or more gasconduits, e.g., a first gas conduit 628 and a second gas conduit 628′,respectively. Two or more gas conduit outlets, e.g., a first gas conduitoutlet 630 and a second gas conduit outlet 630′, are defined at or nearthe opposite end (i.e., opposite to the end that has defined thereinnozzle-receiving inlet) of first gas conduit 628 and second gas conduit628′, respectively. The structure of gas injection plate 850 or 850′having defined therein multiple nozzle-receiving inlets disposed at oneend of multiple gas conduits, which has disposed at the opposite endmultiple gas conduit outlets, is described below in greater detail inthe discussion of FIGS. 8A and 8B.

FIG. 7 shows additional components, which are part of the single gasdistribution system, coupling to first inlets 622 and 622′ and secondinlets 624 and 624′ and FIGS. 8A, 8B, 9, 10A and 10B show componentsrelevant to defining multiple material flow paths from two or more gasconduit outlets. e.g., first gas conduit outlet 630 and second gasconduit outlet 630′, to gas dispensing apertures defined on gasdispensing surface and deliver processing gases inside the enclosure(e.g., enclosure 612 of FIG. 6B).

FIG. 7 shows multiple single gas distribution systems, according to oneembodiment of the present arrangements, for a single unit (e.g., unit 1is hereinafter referred to as “U1”). In this arrangement, multiple massflow controllers (hereinafter “MFC”) set flow rates of componentprocessing gases drawn from their respective gas reservoirs (e.g., H₂reservoir, Ar reservoir and CH₄ reservoir) and/or reservoirs that do notcontain gaseous hydrocarbon material to produce a producing composition,which is described below. Each MFC associated with U1 is identified bysequential numbering, i.e., U1MFC1, U1MFC2, U1MFC3 . . . U1MFC12. Two ormore mass flow controllers 740 and 742, e.g., U1MFC1 and U1MFC2, arecommunicatively coupled to single control valve 744, which in turn mixesand balances the component processing gas flowrates, received fromU1MFC1 and U1MFC2, to form a pure gas and/or mixtures of processingcompositions, such as ArH₂ and ArCH₄. Alternately, two or more mass flowcontrollers 740 and 742, e.g., U1MFC1 and U1MFC2, are communicativelycoupled to single control valve 744, which in turn mixes and balances amixture of component processing gas and/or processing non-gaseousflowrates to form processing compositions, such as ArCH₄. Control valve744 delivers substantially the same processing composition through atleast two gas lines, e.g., a first gas line 722 and a second gas line722′, to at least two injection nozzles, e.g., first gas injectionnozzle 620 and second gas injection nozzle 620′ shown in FIG. 6B,respectively. These lines may not gas lines if non-gaseous processingcompositions are used. As explained above with respect to FIG. 6B, thesame processing composition received at gas injection nozzles 620 and620′ is conveyed to their respective nozzle-receiving inlets 626 and626′.

FIG. 8A shows a cutaway view of a gas injection plate 850 disposed abovesub-enclosure 812A (which is substantially similar to sub-enclosure 612of FIG. 6B) and represents a portion of a processing gas or processingcomposition flow path from one or more gas reservoirs to an interior ofthe sub-enclosure.

FIG. 8B shows a gas injection plate 850′, which is substantially similarto gas injection plate 850 except gas injection plate 850′ of FIG. 8B isshown in a disassembled state, having the underlying sub-enclosure 812Aremoved therefrom. Gas injection plate 850′ has defined therein multiplegas flow networks, e.g., a first gas flow network 854A, a second gasflow network 854B and a third gas flow network 854C.

Further, gas injection plate 850′ includes certain structural featurespreviously presented in connection with the description of FIG. 6B.Consistent with that description, gas injection plate 850′ has definedtherein a first gas flow path extending from nozzle-receiving inlet 826(which is substantially similar to nozzle-receiving inlet 626 of FIG.6B) through gas conduit 828 (which is substantially similar tonozzle-receiving inlet 628 of FIG. 6B) to gas conduit outlet 830 (whichis substantially similar to gas conduit outlet 630 of FIG. 6B). Gasconduit outlet 830 also represents a network inlet because that is apoint of entry for the processing composition to make its way to firstgas flow network 854A. After traversing the various branches of firstgas flow network 850A, the processing gas exits this network frommultiple network outlet apertures 832. By way of example, a processingcomposition entering first gas flow network 854A at gas conduit outlet830, travels through the network and exits from 32 network outletapertures 832. Preferably, the exiting processing composition from eachnetwork outlet apertures 832 has substantially the same pressure.

Moreover, a second gas flow path, in gas injection plate 850′, extendsfrom nozzle-receiving inlet 826′ through gas conduit 828′ to gas conduitoutlet 830′. After this stage, the processing composition continues totravel the second gas flow path as it enters second gas flow network854B and exits from network outlet apertures 832′. Preferably, theexiting processing composition from each network outlet apertures 832′has substantially the same pressure. The same gas injection plate 850′has a third gas flow path defined by structural components including athird gas flow network 854C that are similar to those described inconnection with the description of the first and the second materialflow paths.

FIG. 9 shows two multiple sub-enclosures 812A and 812B arranged inseries to define a portion of an enclosure. In this figure, firstsub-enclosure 812A is shown in a disassembled state, without theunderlying gas injection plate and second sub-enclosure 812B is shown(to simplify illustration) with a cutaway view of the gas injectionplate (e.g., gas injection plate 850′ of FIG. 8B) having defined thereinfirst and second gas flow networks 854A, 854B and 854C. Firstsub-enclosure 812A is shown to have a gas dispensing surface 860 havingdefined thereon a first set of gas dispensing apertures 852, whichalign, in one-to-one corresponding fashion, with the network outletapertures (e.g., network outlet apertures 832 of FIG. 8B) defined on thegas injection plate (e.g., gas injection plate 850′ of FIG. 8B). As aresult, each of the multiple material flow paths described on a singlesub-enclosure 812A terminate at multiple associated sets of networkoutlet apertures 852.

To this end FIG. 10A shows, sub-enclosures 812A, 812B and 812C andsimilar others are continuously arranged to form the ultimatelyresulting enclosure 512 of FIG. 4A. Each of these sub-enclosures arefitted with multiple gas injection nozzles. By way of example,sub-enclosure 812A is fitted with gas injection nozzles 826 and 826′. Asanother example, each sub-enclosure 812B and 812C are fitted withmultiple, e.g., three different gas injection nozzles. As explainedbelow, this combination of multiple gas injection nozzles along withtheir associated ones of gas flow networks, e.g., gas flow networks854A, 854B and 854C, form at least parts of multiple material flow pathsin a single sub-enclosure.

FIG. 10B shows a portion of gas flow path created when a single gasinjection nozzle 826 is coupled to sub-enclosure 812A. According to thisfigure, the processing composition travels from gas injection nozzle 826to a gas conduit 828 and a gas conduit outlet 830. Gas conduit 828 andgas conduit outlet 830 are substantially similar to gas conduit 628 andgas conduit outlet 630 shown in FIG. 6B. Further, as explained inconnection with the description of FIG. 8B, gas conduit 828 and gasconduit outlet 830 are features that are defined in sub-enclosure 812A(. As a result, FIG. 10B conveys that flow of processing compositionflow from gas injection nozzle 826, which is coupled to sub-enclosure812A, enters a gas injection plate 850′ disposed above sub-enclosure812A.

FIG. 10C shows another portion of a gas flow path created when gasinjection nozzle 826 is coupled to sub-enclosure 812A and specificallyflow of processing composition through gas injection plate 850′ and thenultimately inside the underlying sub-enclosure 812A. According to thisfigure, inside the gas injection plate, the processing composition flowsthrough first gas flow network 854A (also shown in FIG. 8B) and out ofnetwork outlet apertures (e.g., network outlet apertures 832 of FIG. 8B)associated with gas flow network 854A. These network outlet aperturesalign with a first set of gas dispensing apertures (e.g., gas dispensingapertures 852 of FIG. 9 ) such that the processing composition isdispensed through the first set of gas dispensing apertures insidesub-enclosure 812A. As a result, the processing composition delivered byeach of the multiple gas injection nozzles coupled to a singlesub-enclosure 812A, as shown in FIG. 10A, travels the gas flow pathshown in FIGS. 10B and 10C and is delivered inside sub-enclosure 812A.When at least two gas injection nozzles receive a substantially sameprocessing composition from a control valve (e.g., control valve 744)and are dispensed through two sets of gas dispensing apertures, whichare a lateral separating distance apart from each other, insidesub-enclosure 812A to diffuse the processing composition at least thelateral separating distance inside sub-enclosure 812A. The presentteachings recognize that, in this manner, by strategically providing thesubstantially same processing composition inside one or moresub-enclosures (e.g., sub-enclosure 812A and 812B of FIG. 9 ), and eachsub-enclosure using two or more gas injection nozzles, creates asubstantially uniform processing gas environment inside sub-enclosure812A.

If the processing gas is any one of a substrate gas scavengingcomposition, an annealing gas composition or a producing composition,FIGS. 10A, 10B and 10C convey that a substantially uniform scavengingenvironment, annealing environment, or producing environment,respectively, is formed inside one or more sub-enclosure e.g., 812A,812B and/or 812C.

FIG. 11 shows two sub-enclosures 812A and 812B assembled in series whichare disposed inside a furnace sub-structure (e.g., furnace sub-structure302 of FIG. 4B). At a location of assembly of two sub-enclosures 812Aand 812B, an expansion gap 875 is defined therebetween to allow eitheror both of sub-enclosures 812A and 812B to expand into expansion gap875. To allow for the assembly of sub-enclosures 812A and 812B, each ofsub-enclosures 812A and 812B include, on one side, a slidable component876, and have defined, on an opposite side, a cavity 878 that acceptsthe slidable component. To effect the assembly, slidable component 876of sub-enclosures 812A slides into cavity 878 of 812B as shown in FIG.11 . The other sides of sub-enclosures 812A and 812B mate withcomplementary ends of other sub-enclosures to form at least a portion ofenclosure (e.g., enclosure 512 of FIG. 4A). The present teachingstherefore recognize that in this manner an entire enclosure isconstructed and disposed inside furnace sub-structure (e.g., furnacesub-structure 302 of FIG. 4B).

The present teachings offer many methods for processing the substratesurface for graphene formation. In certain implementations of a grapheneformation method, the substrate sheet undergoes electropolishing toclean the substrate sheet before subjecting the substrate sheet to agraphene growing process as described below. The different types ofprocessing, according to preferred embodiments of the present teachings,may use: (1) one or more laterally arranged heat sources (e.g., multiplelaterally arranged heating coils 504 inside furnace 300 that providedifferent amounts of heat at different ranges of lateral distancesinside enclosure 512 as shown in FIGS. 4A and 5 ), except duringscavenging, cooling and post-cooling processing; and (2) multiple gasdistribution systems (e.g., one or more scavenging gas distributionsystems that provide substrate gas scavenging composition inside alaterally extending infeed portion 200 of FIG. 2 and laterally extendingone or more processing gas distribution systems and/or laterallydelivering one or more processing gas distribution systems, such ascomponents and features shown in FIGS. 6A, 6B, 7, 8A, 8B, 9, 10A, 10Band 10C that both laterally extend and provide different types ofprocessing gases at different ranges of lateral distances insideenclosure 512 of FIGS. 4A and 5 ).

FIG. 12 shows a flowchart of a method for processing, according to oneembodiment of the present teachings, a substrate for graphene formation1200 (hereinafter “method 1200”) that, preferably, begins with a step ofdisposing 1202. Step 1202 involves disposing a substrate sheet on asubstrate holder (e.g., pallets 212 of FIG. 12 ). In disposing step1202, the substrate sheet has located thereon a first surface forprocessing (e.g., a first surface area or region on the substrate thatundergoes processing) and a second surface for processing (e.g., asecond surface area or region on the substrate that undergoesprocessing) such that the first surface for processing is separated alateral distance (e.g., a distance in the positive X-direction) apartfrom the second surface for processing. By way of example, the substratesheet may be made from copper or nickel and may be disposed on asubstrate roll (e.g., substrate roll 206 of FIG. 2 ). In one embodimentof the present teachings, step of disposing 1202 involves using a servomotor and an ultrasonic sensor detecting slack loop to dispose thesubstrate on the substrate holder. If graphite pallets are used, as asubstrate holder, they may be about 600 mm long (e.g., in theX-direction), about 400 mm wide (e.g., in the Y-direction) and about 6mm thick (e.g., in the Z-direction) for effectively facilitatingconveyance of the substrate sheet through a graphene formation system ofthe present arrangements (e.g., continuous graphene formation system 100of FIG. 1 ).

In one preferred embodiment, method 1200 of the present teachingsinclude continuously advancing the substrate sheet in a lateraldirection (i.e., in the X-direction) using a linear track that isadvanced by a substrate holder advancing mechanism (e.g., continuousbelt drive system 204 that drives pallets 212 in the lateral directionas shown in FIG. 2 ). As explained below, in preferred embodiments ofthe present teachings, the substrate sheet is continuously laterallyadvancing as its surface undergoes different types of processing, e.g.,scavenging, annealing, producing and cooling, and different processingconditions (e.g., passivating after cooling), applied on the substrate,may vary as a function of the lateral distance (i.e., a distance valuein the X-direction) inside the continuous graphene formation system(e.g., continuous graphene formation system 100 of FIG. 1 ).

Regardless of whether the step of advancing is carried out, afterdisposing step 1202, method 1200 proceeds to a scavenging step 1204.This step includes scavenging, at a scavenging temperature and using asubstrate gas scavenging composition (e.g., an Ar and H₂ gas mixture), asubstrate gas (e.g., including oxygen) present in and around the firstsurface for processing of the substrate sheet to produce asubstrate-gas-depleted surface. Step 1204 may use an angularly flowingstream and/or a laterally flowing stream of a substrate gas scavengingcomposition. Preferably, disposed inside infeed portion (e.g., one ormore of tunnels 210) are multiple scavenging gas outlets, at least someof which are angularly-oriented scavenging gas outlets andlaterally-oriented scavenging gas outlets. The angularly-orientedscavenging gas outlets are oriented at an angle with respect to an axisthat is perpendicular to the substrate holder. As a result, theangularly-oriented scavenging gas outlets, in an operational stateduring step 1204, provide an angular stream of a substrate gasscavenging composition incident upon the substrate sheet to effectivelyscavenge substrate gas in and around the substrate sheet.

Multiple laterally-oriented scavenging gas outlets are designed togenerate multiple continuously flowing streams of substrate gasscavenging composition and, preferably, spanning across multiplescavenging sub-enclosures and flowing in an opposite direction to thedirection of laterally advancing substrate sheet. In preferredembodiments of step 1204, the multiple continuously flowing streams ofsubstrate gas scavenging composition flow over and in a directionopposite to the direction of laterally advancing substrate to evacuateundesired contents, such as heat and different type of contaminants,that may be present inside the tunnels. As a result, the presentteachings recognize that multiple streams of such laterally flowingsubstrate gas scavenging composition may be more effective forcontaminant removal. Although not necessary, step 1204 may beimplemented using one or more scavenging gas stream generatingsubsystems, which include the above-mentioned angularly-orientedscavenging gas outlets and laterally-oriented scavenging gas outlets.

Step 1204 is, preferably, carried out in absence of an active heatingsource positioned adjacent to the first surface for processing. Asexplained below, in this embodiment, some of the heat flowing towardsthe first surface for processing provides the requisite temperaturetreatment and may range from about 50° C. to about 100° C.

Method 1200 also includes an annealing step 1206 that involvesannealing, using a flow rate of the substrate gas scavenging compositionand/or an annealing gas composition and at an annealing temperature, thesecond surface for processing of the substrate sheet. Regardless of thegas composition, the processing gas(es) used during annealing may bedelivered using a gas distribution system (e.g., components and featuresshown in FIGS. 6A, 6B, 7, 8A, 8B, 9, 10A, 10B and 10C) that are coupledto multiple processing sub-enclosures, e.g., multiples of sub-enclosure302 of FIG. 4B, that may be thought of as annealing sub-enclosures.

Annealing step 1206 using multiple annealing sub-enclosures at theappropriate annealing temperature produces an annealed surface. Further,in step 1206, the annealing temperature is higher than the scavengingtemperature and is produced using one or more heat sources (e.g., one ormore laterally arranged heating coils 504 of FIG. 5 ) that are disposedadjacent to the second surface for processing.

Some of the heat, resulting from the annealing temperature and theannealing gas composition and/or the substrate gas scavengingcomposition in step 1206, flows towards the first surface for processingand facilitates formation of the substrate gas depleted surface. Theannealing gas composition and/or the substrate gas scavengingcomposition resulting from step 1206, preferably, flows backwards (e.g.,a negative distance along the X-axis) because the second surface forprocessing is located, in preferred embodiments of the presentarrangement, a positive lateral distance (e.g., a positive distancealong the X-axis) from the first surface for processing.

Further, step 1204 and a subsystem used for carrying out step 1204(e.g., infeed portion 200 of FIG. 2 ) preferably does not includecertain structural features shown in a subsystem used for carrying outstep 1206 (e.g., furnace 300 of FIG. 4A). By way of example, step 1204is carried out without using a gas injection plate (e.g., gas injectionplate 850 of FIG. 8A and gas injection plate 850′ of FIG. 8B) operatingin conjunction with a gas dispensing surface (e.g., gas dispensingsurface 860 having defined thereon a first set of gas dispensingapertures 852 shown in FIGS. 9 and 10B) of a sub-enclosure (e.g., 812Aof FIG. 10B).

The annealing temperature is a temperature inside one or more annealingsub-enclosures and ranges from about 150° C. to about 1100° C. Further,in the absence of a physical barrier between two adjacently disposedscavenging sub-enclosure and annealing sub-enclosure, some of theresidual heat (i.e., heat remaining after a significant amount of it isremoved from chiller block 218 and chiller plate 214 to prevent meltingof tunnels 210 and other components related to scavenging sub-enclosuresin infeed portion 200 of FIG. 2 ), flows in a lateral direction (e.g., adistance in the negative X-direction) into scavenging sub-enclosures ininfeed portion 200 of FIG. 2 . This residual heat further facilitatesscavenging of the substrate gases including removal of moisture trappedin the substrate.

Preferably, annealing step 1206 is carried out contemporaneously toscavenging step 1204, i.e., the second surface for processing isundergoing annealing at the same time the first surface for processingis undergoing scavenging. The present teachings, however, recognize thatstep 1206 may be carried out sequentially and after the conclusion ofstep 1204.

More preferably, annealing step 1206 of the present teachings is carriedout when the second surface for processing of the substrate is presentinside an annealing environment, e.g., annealing sub-enclosures insidefurnace 300 of FIGS. 1 and 4A, and scavenging step 1204 is carried outwhen the first surface for processing is present inside a scavengingenvironment, e.g., scavenging sub-enclosures of infeed portion 200 shownin FIG. 2 or a location inside enclosure 512 of FIGS. 4A and 5 . In evenmore preferred embodiments of the present teachings, the second surfacefor processing is subject to annealing step 1206 inside an annealingenvironment, e.g., enclosure 512 of FIGS. 4A and 5 , at the same time asthe first surface for processing is subject to scavenging step 1204inside the scavenging environment, e.g., inside scavengingsub-enclosures of infeed portion 200 of FIG. 2 or inside enclosure 512of FIGS. 4A and 5 .

FIG. 15 shows a flowchart of a method for scavenging 1500, according toone embodiment of the present teachings and that may be implemented asstep 1204 of FIG. 12 . Method 1500 includes an advancing step 1502. Thisstep involves advancing, inside a scavenging environment (e.g., infeedportion 200 of FIG. 2 ), a surface (e.g., first surface for processingmentioned in step 1202 of FIG. 12 ) a scavenging range of lateraldistance. Step 1502 may be carried out by advancing the substrate sheetin a lateral direction (i.e., in the X-direction) using a linear trackthat is advanced by a substrate holder advancing mechanism (e.g.,continuous belt drive system 204 that drives pallets 212 in the lateraldirection as shown in FIG. 2 ).

The scavenging range of lateral distance of step 1502 includes aninitial scavenging location or region and a subsequent scavenginglateral distance or region such that the subsequent scavenging locationor region is a lateral distance away from the initial scavenginglocation or region. The subsequent scavenging location or region isproximate to an annealing environment, e.g., enclosure 512 of FIGS. 4Band 5 , and the initial scavenging location or region is proximate to anexit opening defined at one end of the scavenging environment that isopposite to the other end (of the scavenging environment), which isproximate to the annealing environment.

Method 1500 also includes a step 1504, which involves subjecting, duringstep 1502, i.e., the advancing of the surface inside the scavengingenvironment, the surface to a flow rate profile of the substrate gasscavenging composition that increases from a relatively low flow ratevalue of the substrate gas scavenging composition at the initialscavenging location or region to a relatively high flow rate value ofthe substrate gas scavenging composition at the subsequent scavenginglocation or region. In other words, steps 1502 and 1504 are carried outcontemporaneously. Further, step 1504 is, preferably, implemented usingone or more scavenging gas distribution systems that deliver, usingmultiple scavenging gas outlets associated with gas curtains 216 shownin FIG. 2 , the substrate gas scavenging composition inside one or moretunnels 210 of FIG. 2 .

By way of example, one or more scavenging gas outlets associated with agas curtain that is located proximate to the exit of the scavengingenvironment deliver the relative low flow rate value of said substrategas scavenging composition at the initial scavenging location. Asanother example, one or more scavenging gas outlets associated with agas curtain that is located proximate to the annealing environment,e.g., enclosure 512 of FIGS. 4B and 5 , deliver the relative high flowrate value of said substrate gas scavenging composition at thesubsequent scavenging location or region.

The relatively low flow rate value of the substrate gas scavengingcomposition, preferably, ranges from 1 about liters/minute to 4.5 aboutliters/minute, and the relatively high flow rate value of the substrategas scavenging composition, ranges from about 0.5 liters/minute to about100 liters/minute and in a more preferred embodiment from about 5liters/minute to about 20 liters/minute.

The relatively high flow rate value of the substrate gas scavengingcomposition near the end of the scavenging environment (e.g., scavengingsub-enclosure of infeed portion 200 of FIG. 2 ) not only accomplishesaggressive scavenging of substrate gases before a next phase ofprocessing commences, but also contributes to removing the heat escapingfrom the annealing environment (e.g., enclosure 512 of FIGS. 4A and 5 ).

Moreover, the relatively high flow rate value of the streams ofsubstrate gas scavenging composition, applied inside the end of thescavenging environment proximate to the annealing environment andflowing outward, away from the annealing environment and towards anopening of the infeed portion, where relatively low flow rate value ofthe streams of substrate gas scavenging composition are applied,represent preferred embodiments of the present teachings. The flow ratedifferential creates a significant pressure drop near an entrance of theannealing environment. Further, this significant the pressure dropcauses certain incident processing gases, e.g., substrate gas scavengingcomposition and annealing gas composition, to laterally flow from insidethe annealing environment, (e.g., annealing sub-enclosures of enclosure512 of FIGS. 4A and 5 ) in an outward direction (e.g., negative lateraldirection), towards the exit opening of the scavenging environment thatis disposed a negative lateral distance away from the annealingenvironment. Such outward flow of the incident processing gases doesmore than—to facilitate scavenging of the substrate gas present in andaround the substrate in the scavenging environment. This outward flow ofthe incident processing gases, present inside an enclosure havingdisposed therein the annealing environment, prevents these processinggases to undesirably flow into and interfere with a downstream localized(graphene) producing environment inside the same enclosure.

FIG. 13 shows a flowchart of a method for annealing 1300, according toone embodiment of the present teachings and that may be implemented asstep 1206 of FIG. 12 . In this embodiment, method 1300 includes a step1302 of pre-treating a surface, at a pretreating temperature and using apretreating incident flow rate of a substrate gas scavenging compositionand/or an annealing gas composition, to produce a contaminant-depletedsurface.

In step 1302, it is preferable to use a substrate gas scavengingcomposition, e.g., a gas mixture of Ar and H₂. While not wishing to bebound by theory, the presence of H₂, during pretreating, removes metalsand carbon-based surface contaminants and thereby prevents undesirablemelting of the (metallic, e.g., copper and/or nickel) substrate. Meltingof the substrate, prior to undergoing high temperature annealing,degrades the substrate quality and as such, the substrate no longerlends itself for effective graphene formation thereon. As a result,pretreatment in step 1302 allows the present methods to realize highyields and high throughput for graphene formation.

Method 1300 also includes a step 1304, which includes treating thecontaminant-depleted surface, at a treating temperature and using atreating incident flow rate of the annealing gas composition, to producean annealed surface. In certain embodiments of the present teachings,step 1304 is carried out after the conclusion of step 1302. In alternateembodiments of the present teachings, steps 1302 and 1304 are carriedout contemporaneously. Method 1300 may be implemented in a batchwiseapproach of forming graphene. Using a continuous approach (e.g.,continuous graphene forming system 100 of FIG. 1 ) represents apreferred approach of the present teachings for realizing high yield andhigh throughput for graphene formation.

Regardless of the approach, treatment of the substrate surface in step1304 is carried out using an annealing gas composition, preferably, inthe absence of a substrate gas scavenging composition. Further, theannealing gas composition may be Ar gas that includes trace amounts ofoxygen. While not wishing to be bound by theory, the presence oxygen intrace amounts serves an important function of reacting with removingcertain types of surface contaminants that are not removed duringpretreatment of the substrate surface using H₂ in step 1302. However,the present teachings recognize that residual amounts of oxygen, whichmay remain on the substrate surface are undesirable to form grapheneused in certain applications. By way of example, to obtain graphene foruse in those applications that require large crystalline structures,residual (trace) amounts of oxygen remaining on the substrate surfaceserve as a nucleation site to undesirably form graphene crystals ofrelatively small sizes. To this end, alternate methods of annealingdescribed in connection with FIGS. 14 and 18 are presented below.Further, in this context, the present teachings recognize that if otherapplications of graphene desire small crystalline structures, thencertain embodiments described in connection with FIGS. 12, 13, 15, 16,17, 19 and 20 provide high yields and high throughput for grapheneformation.

FIG. 14 shows another flowchart of another method for annealing 1400,according to alternate embodiments of the present teachings and that maybe implemented as part of step 1206 of FIG. 12 . Method for annealing1400 includes a pretreating step 1402 and treating step 1404, both ofwhich are substantially similar to pretreating step 1302 and treatingstep 1304 described in connection with the description of FIG. 13 .

Method for annealing 1400, however, includes an additional step, apassivating step 1406 for passivating the annealed surface. Step 1406including passivating an annealed surface (e.g., obtained from steps1304 or 1404 of FIGS. 13 and 14 , respectively), at a passivatingtemperature range and using the substrate gas scavenging composition toreact with oxygen to produce a passivated surface. As explained above,the substrate gas scavenging composition, preferably, reacts with theresidual (trace) amounts of oxygen remaining on the substrate surfaceafter annealing has concluded. Method 1400 is susceptible to beingimplemented under either the batchwise approach or the continuousapproach of graphene formation, but the continuous approach represents apreferred embodiment as it provides high yields and high throughputs forgraphene formation.

The present teachings offer certain preferred embodiments for forminggraphene, including annealing, that comprise: (1) displacing a surface,a pretreating range of lateral distance inside an enclosure; and (2)exposing, during the displacing of the surface inside the enclosure, tothe surface a temperature profile that varies as a function of a lateraldistance displaced within the pretreating range of lateral distanceinside the enclosure; and (3) subjecting, during the displacing of thesurface inside the enclosure, the surface to a pretreating incident flowrate profile of a substrate gas scavenging composition that varies as afunction of a lateral distance displaced within the pretreating range oflateral distance inside the enclosure. These steps (1), (2) and (3),connected to pretreating of the substrate surface, are carried outcontemporaneously.

FIG. 16 shows a flowchart of a method for pretreating 1600, according tocertain preferred embodiment of the present teachings and that may beimplemented as step 1302 or step 1402 of FIGS. 13 and 14 , respectively.Method 1600 includes a displacing step 1602 for displacing a surface(e.g., second surface for processing of step 1206 of FIG. 12 , or thesurface of steps 1302 or 1402 of FIGS. 13 and 14 , respectively) apretreating range of lateral distance inside an enclosure (e.g.,enclosure 512 of FIGS. 4B and 5 ). A substrate surface undergoesannealing inside an annealing environment, which may extend an annealingrange of lateral distance that subsumes the pretreating range of lateraldistance. In certain embodiments, the pretreating range of lateraldistance of the present teachings is a distance value that ranges fromabout 700 mm from an end of a scavenging environment (e.g., infeedportion 200 of FIG. 2 ) or beginning of an annealing environment (e.g.,enclosure 512 of FIGS. 4A and 5 ) to about 1200 mm from the end of thescavenging environment or beginning of the annealing environment.

A relatively large pretreating range of lateral distance of about 400 mmor larger, from a location at or near the beginning of an annealingenvironment, represents a preferred embodiment of the presentarrangement because by holding the adjacently disposed (to the substratesurface) one or more heat sources (e.g., laterally arranged heatingcoils 504 of FIG. 5 that provide heat inside, but are located outsideof, enclosure 512 of FIG. 5 ) at low temperature conditions or in adeactivated (i.e., turned off) state, avoids forming high heatconditions that flow back into the scavenging environment (e.g., one ormore sub-enclosures of infeed portion 200 of FIG. 2 ) and cause damageto the substrate surface and/or the structure responsible for creatingthe scavenging environment.

The pretreating range of lateral distance includes an initialpretreating location or region and, disposed a lateral distance awaytherefrom, a subsequent pretreating location or region. In this context,method 1600 further includes a step of exposing 1604, during displacingstep 1602 inside the enclosure, to heat generated from one or morepretreating heat sources, e.g., heating coils 504 disposed outsideenclosure 512 of FIG. 5 , but that provide heat inside the pretreatingrange of lateral distance inside the enclosure. In this configurationand in exposing step 1604, one or more pretreating heat sources aredisposed adjacent to the surface undergoing pretreatment.

Further, one or more pretreating heat sources present at the initialpretreatment location or region, provide a minimum value of theannealing temperature at a corresponding location inside the enclosure.Further still, one or more pretreating heat sources present at the atthe subsequent pretreatment location or region, provide a maximum valueof the annealing temperature at a corresponding location inside theenclosure. In certain implementations of the present teachings, theminimum temperature value ranges from about 100° C. to about 200° C. andthe maximum value of the annealing temperature is a value that rangesfrom about 1000° C. to about 1100° C.

Method 1600 further still includes a step 1606 that involves, during thedisplacing (of step 1602) of the surface and inside the enclosure,subjecting the surface to an incident flow rate profile of the substrategas scavenging composition that increases as a function of lateraldistance displaced within the pretreating range of lateral distance.Under one approach, incident flow rate value of the substrate gasscavenging composition linearly increases as the gas delivery locationthat, the surface is subjected to, laterally advances from one deliverylocation to another along the pretreating range of lateral distance. Thepresent teachings recognize, however, that under an alternate approach,these incident flow rates increase non-linearly as the surface laterallyadvances along the pretreating range of lateral distance.

Regardless of the approach, portions of the processing gas distributionsystems, which may laterally extend the pretreating range of lateraldistance, deliver at the initial pretreating location or region arelatively low flow rate value of the substrate gas scavengingcomposition, and deliver at the subsequent pretreating location orregion a relatively high flow rate value of the substrate gas scavengingcomposition. The relatively low flow rate value of the substrate gasscavenging composition, preferably, ranges from about 0.5 liters/minuteto 20 liters/minute and more preferably range from about 0.5liters/minute to 4.5 liters/minute, and the relative high incident flowrate value of the substrate gas scavenging composition ranges from about5 liters/minute to 100 liters/minute and more preferably ranges fromabout 5 liters/minute to 20 liters/minute. The present teachingsrecognize that steps 1602, 1604 and 1606 are carried outcontemporaneously.

After the conclusion of pretreatment, annealing of a substrate surfacemay advance to treating of the substrate surface as explained below. Thepresent teachings offer methods of forming graphene, including treating,that comprise: (1) displacing a surface, a treating range of lateraldistance inside an enclosure; and (2) exposing, during the displacing ofthe surface inside the enclosure, to the surface a temperature profilethat remains substantially constant within the treating range of lateraldistance inside the enclosure; and (3) subjecting, during the displacingof the surface inside the enclosure, the surface to a treating incidentflow rate profile of a substrate gas scavenging composition that variesas a function of a lateral distance displaced within the pretreatingrange of lateral distance inside the enclosure. These steps (1), (2) and(3), connected to treating of the substrate surface, are carried outcontemporaneously.

FIG. 17 shows a flowchart of a method for treating 1700, according topreferred embodiments of the present teachings, and that may beimplemented as step 1304 or step 1404 of FIGS. 13 and 14 , respectively.Method 1700 includes a step 1702 that involves displacing a surface atreating range of lateral distance (e.g., treating range of lateraldistance of steps 1304 or 1404 of FIGS. 13 and 14 , respectively) insidethe enclosure (e.g., enclosure 512 of FIG. 3 ). A substrate surfaceundergoes annealing inside an annealing environment, which may extend anannealing range of lateral distance that subsumes the pretreating rangeof lateral distance and the treating range of lateral distance. Thetreating range of lateral distance beings after an end of thepretreating range of lateral distance. The treating range of lateraldistance is, preferably, a distance value that ranges about 100 mm afteran end of the pretreating range of lateral distance to about 3000 mmafter the end of the pretreating range of lateral distance.

A starting location of the treating range of lateral distance rangesfrom about 300 mm from a location at or near beginning of the annealingenvironment to about 5000 mm from the location at or near beginning ofthe annealing environment and spans a distance that ranges from about300 mm to about 3000 mm. By way of example, a location at the beginningof the annealing environment is at 0 mm of enclosure 512 of FIG. 5 andthe term “near beginning of the annealing environment” refers to adistance ranging from 0.01 mm from the beginning of the enclosure to 5mm from the beginning of the enclosure.

Method 1700 further includes an exposing step 1704 of exposing, duringstep 1702, the surface to heat generated from one or more laterallyextending treating heat sources disposed (e.g., heating coils 504 ofFIG. 5 that extend a treating range of lateral distance) adjacent to thesurface. As shown in FIG. 5 , heating coils 504 are adjacent to thesurface as they provide heat inside, but are located outside of,enclosure 512. In this configuration and in exposing step 1704, one ormore of the “treating” heat sources are maintained at a treatingtemperature to generate a substantially constant annealing temperature(e.g., allowing a fluctuation of up to about ±5% of the annealingtemperature) along the treating range of lateral distance inside theenclosure. The treating temperature may be a temperature value thatranges from about 500° C. to about 1100° C.

Further, method 1700 further still includes a step 1706 that involvesmaintaining, during displacing step 1702 of the surface and inside theenclosure, a substantially uniform incident flow rate of the annealinggas composition along the treating range of lateral distance. Althoughnot necessary, processing gas distribution systems, which laterallyextend the treating range of lateral distance, preferably deliver theannealing gas composition along that range of lateral distance. Inpreferred embodiments, these gas distribution systems of the presentarrangements, which extend the treating range of lateral distance ordeliver annealing gas compositions to the treating range of lateraldistance, do not provide substrate gas scavenging compositions insidethe annealing sub-enclosures. Exemplar values of the substantiallyuniform incident flow rate of the annealing gas composition ranges fromabout 3 liters/minute to about 5 liters/minute. The present teachingsallow a fluctuation of up to about ±5% in the flow rates of theannealing gas composition from one lateral location to another. Thepresent teachings recognize that steps 1702, 1704 and 1706 are carriedout contemporaneously.

The present teachings offer further still other methods of forminggraphene, including passivating, that comprise: (1) displacing asurface, a passivating range of lateral distance inside an enclosure;(2) exposing, during the displacing of the surface inside the enclosure,to the surface a temperature profile that remains substantially constantwithin the passivating range of lateral distance inside the enclosure;and (3) subjecting, during the displacing of the surface inside theenclosure, the surface to a passivating incident flow rate profile of asubstrate gas scavenging composition that varies as a function of alateral distance displaced within the passivating range of lateraldistance inside the enclosure. These steps (1), (2) and (3), connectedto passivating of the substrate surface, are carried outcontemporaneously.

FIG. 18 shows a flowchart of a method for forming graphene 1800,according to preferred embodiments of the present teachings, includingpassivating and that may be implemented as step 1406 of FIG. 14 . Methodfor annealing including passivating 1800 includes a step 1802 ofdisplacing, inside an enclosure, a surface along a passivating range oflateral distance that includes an initial passivating lateral distanceor region and, disposed a lateral distance away therefrom, a subsequentpassivating lateral distance or region. A starting location of thepassivating range of lateral distance ranges from about 1700 mm from ator near the beginning of the annealing environment to about 7000 mm fromat or near the beginning of the annealing environment and spans adistance that ranges from about 500 mm to about 2000 mm. A substratesurface undergoes annealing inside an annealing environment, which mayextend an annealing range of lateral distance that subsumes thepretreating range of lateral distance, the treating range of lateraldistance and the passivating range of lateral distance. The passivatingrange of lateral distance starts after the end of the treating range oflateral distance.

Method 1800 further includes a step 1804 of exposing, during step 1802,the surface to heat generated from one or more heat sources. By way ofexample, one or more heating coils 304 of FIG. 4B that extend apassivating range of lateral distance provide heat inside, but arelocated outside, of enclosure 512 of FIGS. 4B and 5 are adjacent to thesurface undergoing passivation. In this configuration and in exposingstep 1804, one or more passivating heat sources generate a substantiallyconstant annealing temperature inside the enclosure, e.g., annealingsub-enclosures that span the passivating range of lateral distance andimplement step 1804.

Further, method 1800 further still includes a step 1806 of subjecting,during step 1802, the surface inside the enclosure to a decreasingincident flow rate profile of the passivating gas composition, e.g.,substrate gas scavenging composition, that varies as function of thelateral distance within the passivating range of lateral distance. Incertain embodiments, step 1806 is carried out using multiple gasdistribution systems that extend a passivating range of lateral distanceor deliver the substrate gas scavenging composition to the passivatingrange of lateral distance. One or more of the gas distribution systems,which may be disposed at or deliver to the initial passivating lateraldistance or region inside furnace 300 of FIG. 5 , apply a relativelyhigh flow rate of the substrate gas scavenging composition to thesurface, when it is positioned at, the initial passivating lateraldistance or region inside the enclosure. Further, one or more of the gasdistribution systems, which may be disposed at or deliver to thesubsequent passivating lateral distance or region inside furnace 300 ofFIG. 5 , apply a relatively low flow rate of the passivating gascomposition. e.g., substrate gas scavenging composition, to the surface,when it is positioned, at the subsequent passivating lateral distance orregion inside the enclosure. The relatively high flow rate of thepassivating gas composition ranges from 5 liters/minute to about 100liters/minute and in a more preferred embodiment ranges from about 5liters per minute to about 20 liters per minute. The relatively low flowrate of the passivating gas composition ranges from about 0.5liters/minute to about 20 liters/minute and in a more preferredembodiment ranges from about 0.5 liters/minute to about 4.5liters/minute. The present teachings recognize that steps 1802, 1804 and1806 are carried out contemporaneously.

In one preferred embodiment of the present teachings for formation ofgraphene on the substrate surface, the process begins by displacingdisposing, on a substrate holder, a substrate sheet having locatedthereon a first surface for processing and a second surface forprocessing. The first surface for processing is separated by a positivelateral distance apart from said second surface for processing.

This embodiment of the method of producing graphene further includesannealing, in the presence of an annealing gas composition and at anannealing temperature, the first surface for processing of the substratesheet to produce an annealed surface. In one implementation of thisstep, the annealing temperature is produced using one or more laterallyextending heat sources disposed adjacent to the first surface forprocessing.

Further still, this method of forming graphene includes producing, inpresence of a producing composition, graphene on the second surface toproduce a graphene deposited surface. In more preferred embodiments, theincident flow rates of producing composition inside the producingsub-enclosures, i.e., sub-enclosures dedicated to carrying out grapheneformation, that are in proximate distance to the annealingsub-enclosures, are relatively low and the incident flow rates ofannealing gas composition inside the annealing sub-enclosures, which arein proximate distance to the producing sub-enclosures, are alsosimilarly relatively low.

More preferred embodiments of the present methods do not, therefore,allow an appreciable amount of the annealing gas composition from theannealing step or location to flow a positive lateral distance towardsthe location of producing on the second surface for processing and,therefore, does not interfere with the formation of graphene. Morepreferred embodiments of this method also do not allow the producingcomposition to flow a negative lateral distance toward the annealinglocation of the first surface for processing and, therefore, does notinterfere with the annealing of the first surface for processing. Thepresent teachings recognize that the above-mentioned steps of annealingand producing graphene are carried out contemporaneously.

In alternate embodiments that implement passivating of the annealedsurface, prior to graphene formation, the present teachings recognizethat relatively high incident flow rates of substrate gas scavengingcomposition and/or annealing gas composition are delivered inside theannealing sub-enclosures that are positioned relatively further awayfrom the producing sub-enclosures and, similarly, relatively high flowrates of producing composition are delivered inside the producingsub-enclosures that are positioned relatively further away from theannealing sub-enclosure and/or cooling sub-enclosures. Such processingconditions of the present teachings prevents or minimizescross-contamination between two different types of processing,adjacently implemented, inside the same enclosure.

The present teachings offer preferred embodiments for producing grapheneon a substrate surface. An exemplar of these embodiments comprises: (1)displacing a surface, a producing range of lateral distance inside anenclosure; (2) exposing, during the displacing of the surface inside theenclosure, a temperature profile that varies as a function of a lateraldistance displaced within the producing range of lateral distance insidethe enclosure; and (3) subjecting, during the displacing of the surfaceinside the enclosure, the surface to a producing incident flow rateprofile of a substrate gas scavenging composition that varies as afunction of a lateral distance displaced within the producing range oflateral distance inside the enclosure. These steps (1), (2) and (3),connected to producing of graphene on the substrate surface, are carriedout contemporaneously.

FIG. 19 shows a flowchart of a preferred method for producing 1900,according to one embodiment of the present teachings, graphene on asubstrate surface. Method for producing 1900 may begin with a displacingstep 1902 and that includes displacing a surface (e.g., a first or asecond surface for processing) a producing range of lateral distanceinside the enclosure. By way of example, a starting location of theproducing range of lateral distance inside the enclosure ranges fromabout 250 mm from the beginning of the enclosure to about 9000 mm fromthe beginning of the enclosure and spans a distance that ranges fromabout 500 mm to about 10000 mm inside the enclosure.

The producing range of lateral distance includes an initial producinglocation or region, an intermediate producing lateral distance or regionand a subsequent producing location or region. The subsequent producinglocation or region is disposed a lateral distance apart from theintermediate producing lateral distance or region, which, in turn, isdisposed a lateral distance apart from the initial producing location orregion. In other words, the intermediate producing lateral distance orregion is disposed between the initial producing location or region andthe subsequent producing location or region.

Method for producing 1900 further includes an exposing step 1904, whichinvolves exposing the surface to heat generated from one or more heatsources (e.g., laterally arranged heating coils 304 or 504 of FIGS. 3and 5 , respectively) that extends the producing range of lateraldistance and are disposed adjacent to the surface. Step 1904 may becarried out as the surface travels a portion, e.g., at least half, ofthe producing range of lateral distance inside the enclosure. Thetemperature of one or more of these heat sources, extending at least aportion of the producing range of lateral distance, generate a requisiteamount of heat in corresponding locations inside the enclosure to have arelatively constant temperature that ranges from about 500° C. to about1100° C. and in a more preferred embodiment ranges from about 900° C. toabout 1100° C.

Method for producing 1900 may further still include a step 1906 ofsubjecting, during step 1902, the surface to an incident flow rateprofile of a producing composition. In this step, a constant relativelylow flow rate of the producing composition is applied to the surface atthe initial producing location or region. Further, a first maximum flowrate of the producing composition is applied to the surface at theintermediate producing lateral distance or region. Further still, asecond maximum flow rate of the producing composition is applied to thesurface at the subsequent producing location or region. The secondmaximum flow rate is, preferably, higher than the first maximum flowrate to realize high yield and high throughput for graphene formation.

In a preferred implementation of this incident flow rate profile of theproducing gas, the second maximum flow rate is almost twice as higherthan the first maximum flow rate. The second maximum value of the flowrate of the producing gas is a flow rate value that ranges from about 5liters/minute to about 100 liters/minute and in a more preferredembodiment ranges from about 5 liters/minute to about 20 liters/minuteand the first maximum value of the flow rate of the producing gas is aflow rate value that ranges from about 0.5 liters/minute to about 20liters/minute and in a more preferred embodiment ranges from about 0.5liters liters/minute to about 4.5 liters/minute. The present teachingsrecognize that steps 1902, 1904 and 1906 are carried outcontemporaneously.

After formation of graphene as described in connection with FIG. 19 ,the substrate surface with graphene begins cooling, preferably, insidethe same enclosure used for graphene formation. In more preferredembodiments, outside the enclosure and in a cooling environment, e.g.,outfeed portion 400 shown in 3A and 3B, the substrate surface withgraphene undergoes further cooling to a greater extent than theenclosure. In this embodiment of the present teachings,laterally-oriented outfeed gas outlets generate laterally flowingsubstrate gas scavenging streams towards an exit end of the outfeedtunnels for removing contents, e.g., heat, producing composition andsubstrate gas scavenging composition, present inside one or more of theoutfeed tunnels to form a protective layer above the substrate surfaceundergoing cooling.

Moreover, these outfeed gas outlets provide, preferably, a relativelyhigh flow rate of the substrate gas scavenging composition insideoutfeed tunnels 410 near an interface between the enclosure and outfeedportion 400 of FIGS. 3A and 3B. The outfeed gas outlets also,preferably, provide a relatively low flow rate value of substrate gasscavenging composition at or near an exit end of outfeed tunnels 410 oroutfeed portion 400 of FIGS. 3A and 3B. As a result, contents insideoutfeed tunnels proximate to the producing/cooling environment insidethe enclosure are flowing outward, away from the producing/coolingenvironment and towards an opening of the outfeed portion forevacuation. This creates flow rate differential creates a significantpressure drop near an exit of the producing/cooling environment, e.g.,enclosure 512 of FIGS. 4A and 5 . Further, this significant the pressuredrop causes certain incident processing gases, e.g., substrate gasscavenging composition and producing composition, to laterally flow frominside the producing/cooling environment, (e.g., producing/coolingsub-enclosures of enclosure 512 of FIGS. 4A and 5 ) in an outwarddirection, towards the exit opening of the cooling environment that isdisposed a positive lateral distance away from the producing/coolingenvironment. Such outward flow of the incident processing gases, e.g.,producing gas and substrate gas scavenging composition, prevents theseprocessing gases to undesirably flow into and interfere with theupstream localized (graphene) annealing environment inside the sameenclosure or further upstream scavenging environment inside the infeedportion 200 shown in FIG. 2 .

FIG. 20 shows a flowchart of a method for processing 2000, according toone embodiment of the present teachings, a substrate surface foreffectively forming graphene thereon. In one embodiment, method forprocessing 2000 of the present teachings begins with a displacing step2002, which includes displacing a surface of a substrate sheet ascavenging range of lateral distance inside a scavenging sub-enclosure(e.g., a lateral distance spanning the infeed portion 200 of FIG. 2 ).By way of example, a continuous belt drive system 204 pushes pallets 212disposed on a linear track of infeed portion 200, as shown in FIG. 2 .Further in this example, the substrate sheet is rolled out fromsubstrate roll 206 and disposed upon pallets 212 as shown in FIG. 2prior to the pallets 212 advancing in a positive lateral direction.

Method 2000 also includes a step of scavenging 2004 that is carried outduring step of displacing step 2002 and inside the scavengingsub-enclosure (e.g., sub-enclosures that make up infeed portion 200 ofFIG. 2 ). According to step 2004, the surface undergoes scavenging(e.g., scavenging step 1204 of FIG. 12 and method for scavenging 1500 ofFIG. 15 ) to remove substrate gas (e.g., oxygen) from the surface, asthe surface travels the scavenging range of lateral distance inside asub-scavenging enclosure to produce a contaminant-depleted surface.

In preferred embodiments, method for processing 2000 of the presentteachings includes a step 2006, which involves moving thecontaminant-depleted surface an annealing range of lateral distanceinside an enclosure (e.g., furnace 200 of FIG. 2 ) that is locateddownstream from the scavenging sub-enclosure (e.g., sub-enclosures thatmake up infeed portion 200 of FIG. 2 ). Moving step 2006 moves thecontaminant-depleted surface, preferably, from a location at or near anend of the scavenging range of lateral distance (e.g., where the infeedportion 200 ends or near an ending location of the lateral distancespanning the infeed portion 200 of FIG. 2 ). At this stage, preferablythe contaminant-depleted surface is a certain distance inside theenclosure (e.g., a certain distance inside furnace 200 of FIG. 2 ). Inother words, the annealing range of lateral distance is a lateraldistance that begins from a location at or near the end of thescavenging range of lateral distance.

Method for processing 2000 includes a step of annealing 2008 to producean annealed surface. In this step, during step 2006 and inside theenclosure, the contaminant-depleted surface undergoes annealing (e.g.,annealing step 1206 of FIG. 12 , method for annealing 1300 of FIG. 13and steps related to annealing described in methods 1400, 1600, 1700 and1800 of FIGS. 14, 16, 17 and 18 ).

Method for processing 2000 may also carry out an advancing step 2010.This step includes advancing, within the enclosure, the annealed surfacea producing range of lateral distance. The annealed surface travels theannealed range of lateral distance from a location at or near the end ofthe annealing range of lateral distance.

Preferably, after the conclusion of annealing step 2008 to produce theannealed surface, method for processing 2000 includes a step ofproducing 2012. According to this step, during advancing step 2010 andinside the enclosure, graphene is produced on the annealed surface toproduce a (graphene) produced surface. In other words, in producing step2012, graphene is produced on the substrate surface inside the sameenclosure where annealing step 2008 is carried out. By way of example,method for processing 1900 of FIG. 19 describes various steps forimplementing producing step 2012.

The present teachings, however, recognize that high throughput and highyield graphene systems and methods preferably implement furtherprocessing that facilitates downstream efficient recovery of graphenefrom the substrate sheet, without destroying the yielded graphenestructure and the substrate sheet.

To this end, method 2000 contemplates carrying out a conveying step2014. In this step, within and at a location outside the enclosure, the(graphene) produced surface is conveyed a cooling range of lateraldistance. The producing surface travels the cooling range of lateraldistance from a location at or near the end of the producing range oflateral distance. By way of example, the cooling range of lateraldistance begins at a location near the end of furnace 200 and extends toa location at or near an end of outfeed portion 400 of FIG. 4A.

Method 2000 also includes a cooling step 2016 for cooling, duringconveying step 2014 and inside and outside the enclosure, the (graphene)produced surface to form a cooled surface. Although a substantiallysignificant amount of cooling of the (graphene) produced surface takesplace in outfeed portion 300 shown in FIGS. 3A and 3B, cooling,preferably, begins inside cooling sub-enclosures, i.e., sub-enclosures302 of FIG. 4A dedicated to cooling the substrate surface, that arepositioned after producing sub-enclosures. The outfeed sub-enclosureswhich are contiguously arranged to form outfeed portion 300 areseparated by gas curtains 216, which have strategically placed outfeedgas outlets to apply an inert gas stream on the (graphene) producedsurface. Other provisions for effective cooling of the substrate surfaceinclude heat sink 322 and top and bottom chiller plates 314A and 314Bshown in FIGS. 3A and 3B, respectively.

In more preferred embodiments, method 2000 includes a passivating step,which involves passivating the cooled surface using an inert or reducinggas to produce a cooled, passivated surface that is ready for recoveryof graphene from the substrate sheet it was produced on.

Method 2000 is described in terms of a single region on a surface of thesubstrate sheet undergoing processing, e.g., scavenging of the substrategas, annealing, producing of graphene, and cooling off the grapheneproduced on a region of the substrate surface. The present teachings,however, recognize that the advantages of the present systems and methodfor producing graphene are not so limited. By way of example, at thesame time when a first region of the substrate surface (a “first surfacefor processing”) is subject to scavenging step 2004, a second region ofthe substrate surface (a “second surface for processing”) is subject toannealing step 2008, a third region of the substrate surface (a “thirdsurface for processing”) is subject to producing step 2012 and a fourthregion of the substrate surface (a “fourth surface for processing”) issubject to cooling step 2016. As another example, at the same time whena surface area or region is subject to annealing step 2008, anothersurface area or region is subject to producing step 2012. In certainimplementations of this example, yet another surface area or region issubject to cooling step 2016 at the same time the other surface areas orregions are undergoing different types of processing. The presentteachings recognize that different type of processing on differentsurface areas or regions of the same substrate surface are carried outat the same time to realize a high throughput for the graphene producingsystems and methods.

The present teachings also recognize that it is not necessary to carryout displacing step 2002, moving step 2006, advancing step 2010, andconveying step 2014 to realize the benefits of the present teachings.Further, the advantages of the present teachings are also realized whenthe substrate sheet is processed for graphene formation using abatchwise process, and not a continuous process, implemented in one ormore discrete processing chambers, each dedicated to carrying out one ormore different types of processes. Further still, in certain embodimentsof the present teachings, annealing (e.g., pretreating, treating andpassivating) are not required for producing graphene. In theseembodiments, after scavenging, the structural provisions of the presentarrangements and processing conditions of the present teachings providefor producing graphene on the substrate and then cooling the substratewith graphene formed thereon.

Although the invention is illustrated and described herein as embodiedin one or more specific examples, it is nevertheless not intended to belimited to the details shown, since various modifications and structuralchanges may be made therein without departing from the spirit of theinvention and within the scope and range of equivalents of the claims.By way of example, there is no reason why the advantages andimplementations of the present teachings are not realized in batchwisegraphene deposition systems and methods. Accordingly, it is appropriatethat the appended claims be construed broadly, and in a mannerconsistent with the scope of the invention, as set forth in thefollowing claims.

What is claimed is:
 1. A method for forming graphene, said methodcomprising: disposing, on a laterally extending substrate holder, alaterally extending substrate sheet having located thereon a firstsurface for processing and a second surface for processing, wherein saidsecond surface for processing is located a positive lateral distancefrom said first surface for processing; scavenging, in presence of asubstrate gas scavenging composition in one or more infeed tunnelsdisposed adjacent to said substrate holder, a substrate gas present inand around said first surface for processing to produce a substrate gasdepleted surface; and annealing, in presence of an annealing gascomposition and at an annealing temperature in one or more processingsub-enclosures disposed laterally adjacent to said one or more infeedtunnels, said second surface for processing to produce an annealedsurface, wherein said annealing temperature is produced using one ormore heat sources being disposed adjacent to said second surface forprocessing, and wherein some of said heat, resulting from said annealingtemperature and said annealing gas composition, flows from said one ormore processing sub-enclosures towards said first surface for processingand facilitates production of said substrate gas depleted surface insaid one or more infeed tunnels.
 2. The method for forming graphene ofclaim 1, wherein said scavenging is carried out in absence of an activeheating source positioned adjacent to said first surface for processing.3. The method for forming graphene of claim 1, wherein some of said heatflowing towards said first surface for processing provides a temperaturetreatment ranging from about 50° C. to about 100° C.
 4. The method forforming graphene of claim 1, wherein said scavenging includes: utilizingmultiple gas outlets disposed within said one or more infeed tunnelsincluding multiple laterally-oriented gas outlets and multipleangularly-oriented gas outlets to deliver said substrate scavenging gascomposition during said scavenging step, wherein multiple saidlaterally-oriented gas outlets are oriented in a direction that isparallel to said substrate holder and multiple said angularly-orientedgas outlets are oriented in a direction that is at an angle to an axisperpendicular to said substrate holder; protecting said substrate sheetfrom contaminants present around said substrate sheet using a laterallyflowing stream of said substrate gas scavenging composition generatedfrom said laterally-oriented gas outlets; and contacting said substratesheet with an angularly flowing stream of said substrate gas scavengingcomposition generated from said angularly-oriented gas outlets.
 5. Themethod for forming graphene of claim 1, wherein said substrate gasscavenging composition is a mixture of an inert gas and hydrogen gas atan inert gas to hydrogen gas ratio ranging from about 100:01 to about100:5, and wherein said annealing is performed in presence of saidannealing gas composition in absence of said substrate gas scavengingcomposition.
 6. The method for forming graphene of claim 1, wherein saiddisposing includes introducing said substrate sheet on said substrateholder at a feed rate ranging from about 1 mm/second to about 30mm/second, wherein a reference point is a location at which saidsubstrate sheet first contacts said substrate holder, and wherein afirst distance extends between said reference point and said firstsurface for processing and a second distance extends between saidreference point and said second surface for processing, wherein saidsecond distance ranges from about 1.2 times of said first distance toabout 2 times of said first distance.
 7. The method for forming grapheneof claim 1, wherein said scavenging comprises: advancing said firstsurface for processing a scavenging range of lateral distance insidesaid one or more infeed tunnels; increasing, during said advancing andinside said one or more infeed tunnels, an incident flow rate of saidsubstrate gas scavenging composition from a lower first incident flowrate value to a higher second incident flow rate value; and allowingsome of said heat, resulting from said annealing temperature and saidannealing gas composition used during said annealing, to flow from saidone or more processing sub-enclosures in an opposite direction to saidadvancing of said first surface for processing to said scavenging rangeof lateral distance inside said one or more infeed tunnels.
 8. Themethod for forming graphene of claim 7, wherein said scavenging range oflateral distance ranges from about 900 mm to about 2200 mm, said lowerfirst incident flow rate value of said substrate gas scavengingcomposition ranges from about 0.5 liters/minute to about 20liters/minute, and said higher second incident flow rate value of saidsubstrate gas scavenging composition ranges from about 5.5 liters/minuteto about 100 liters/minute.
 9. The method for forming graphene of claim1, wherein said annealing comprises: mixing, utilizing one or more massflow controls, certain amounts of one or more types of component gasesstored inside one or more reservoirs, to produce said annealing gascomposition; activating an annealing control valve, that iscommunicatively coupled, at one end, to one or more said mass flowcontrols, and communicatively coupled, at another end, to multiple setsof gas dispensing apertures disposed inside said one or more processingsub-enclosures, and conveying said annealing gas composition from one ormore said reservoirs to said processing sub-enclosures to carry out saidannealing, wherein one set of gas dispensing apertures are separated alateral separating distance from another set of gas dispensingapertures; creating an annealing environment by utilizing heat generatedfrom one or more heat sources and utilizing said annealing gascomposition that diffuses into a region, spanning at least said lateralseparating distance, inside said one or more processing sub-enclosures.10. The method for forming graphene of claim 1, wherein said scavengingand said annealing are carried out contemporaneously.
 11. The method forforming graphene of claim 1, wherein said annealing temperature,produced utilizing one or more heat sources disposed adjacent to saidsecond surface for processing, is higher than a scavenging temperatureresulting from some of said heat that flows towards said first surfacefor processing.
 12. The method for forming graphene of claim 11, whereinsaid annealing temperature ranges from about 500° C. to about 1100° C.,and said scavenging temperature ranges from about 50° C. to about 100°C.
 13. A method for forming graphene, said method comprising: disposing,on a laterally extending substrate holder, a laterally extendingsubstrate sheet having located thereon a first surface for processingand a second surface for processing, wherein said second surface forprocessing is located a positive lateral distance from said firstsurface for processing; scavenging, in presence of a substrate gasscavenging composition at a scavenging flow rate in one or more infeedtunnels disposed adjacent to said substrate holder, a substrate gaspresent in and around said first surface for processing to produce asubstrate gas depleted surface; annealing, in presence of an annealinggas composition at an annealing flow rate and at an annealingtemperature in one or more processing sub-enclosures disposed laterallyadjacent to one or more said infeed tunnels, said second surface forprocessing to produce an annealed surface, wherein said annealingtemperature is produced using one or more heat sources being disposedadjacent to said second surface for processing, and wherein thescavenging flow rate is greater than the annealing flow rate such that apressure drop is created adjacent an entrance of the one or moreprocessing sub-enclosures, and wherein some of said heat, resulting fromsaid annealing temperature and said annealing gas composition, flowsfrom said one or more processing sub-enclosures towards said firstsurface for processing and facilitates production of said substrate gasdepleted surface in said one or more infeed tunnels.
 14. The method forforming graphene of claim 13, wherein said scavenging is carried out inabsence of an active heating source positioned adjacent to said firstsurface for processing.
 15. The method for forming graphene of claim 13,wherein some of said heat flowing towards said first surface forprocessing provides a scavenging temperature ranging from about 50° C.to about 100° C.
 16. The method for forming graphene of claim 13,wherein said scavenging comprises: advancing said first surface forprocessing a scavenging range of lateral distance inside said one ormore infeed tunnels; increasing, during said advancing and inside saidone or more infeed tunnels, the scavenging flow rate from a lower firstincident flow rate value to a higher second incident flow rate value;and allowing some of said heat, resulting from said annealingtemperature and said annealing gas composition used during saidannealing, to flow from said one or more processing sub-enclosures in anopposite direction to said advancing of said first surface forprocessing to said scavenging range of lateral distance inside said oneor more infeed tunnels.
 17. The method for forming graphene of claim 16,wherein said scavenging range of lateral distance ranges from about 900mm to about 2200 mm, said lower first incident flow rate value of saidscavenging flow rate ranges from about 0.5 liters/minute to about 20liters/minute, and said higher second incident flow rate value of saidsubstrate gas scavenging composition ranges from about 5.5 liters/minuteto about 100 liters/minute.
 18. The method for forming graphene of claim13, wherein said substrate gas scavenging composition is a mixture of aninert gas and hydrogen gas.
 19. The method for forming graphene of claim18 wherein said mixture is at an inert gas to hydrogen gas ratio rangingfrom about 100:01 to about 100:5, and wherein said annealing isperformed in presence of said annealing gas composition in absence ofsaid substrate gas scavenging composition.